Found: 5
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Effective design technique for improvement of electrostatics behaviour of dopingless TFET: proposal, investigation and optimisation.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 10, p. 1480, doi. 10.1049/mnl.2018.5129
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- Article
Junction-less charge plasma TFET with dual drain work functionality for suppressing ambipolar nature and improving radio-frequency performance.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 1, p. 18, doi. 10.1049/mnl.2017.0197
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- Article
Performance investigation of hetero material (InAs/Si)-based charge plasma TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 6, p. 358, doi. 10.1049/mnl.2016.0688
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- Article
Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 1, p. 11, doi. 10.1049/mnl.2016.0351
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- Article
Physics-based simulation study of high-performance gallium arsenide phosphide-indium gallium arsenide tunnel field-effect transistor.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 7, p. 366, doi. 10.1049/mnl.2016.0050
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- Article