Stepped Doped High k VDMOS: Switching Characteristics.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 15, p. 1, doi. 10.1002/pssa.202300311
- By:
- Publication type:
- Article
Works by RAJPUT, AMIT SINGH
Results: 5
1
2
Efficient and High-Performance MTCMOS Employed 34T-Full Subtractor.
- Published in:
- Journal of Active & Passive Electronic Devices, 2018, v. 13, n. 1, p. 11
- By:
- Publication type:
- Article
3
Estimation of Static Noise Margin by Butterfly Method Using Curve-Fitting Technique.
- Published in:
- Journal of Active & Passive Electronic Devices, 2018, v. 13, n. 1, p. 1
- By:
- Publication type:
- Article
4
An 8T SRAM Cell with Improved I<sub>ON</sub>/I<sub>OFF</sub> Ratio and with Faster Read Speed.
- Published in:
- Journal of Active & Passive Electronic Devices, 2020, v. 15, n. 1/2, p. 127
- By:
- Publication type:
- Article
5
Analysis of Static Noise Margin in 6T Sram Cell At 45 And 32 NM Technology.
- Published in:
- Journal of Active & Passive Electronic Devices, 2019, v. 14, n. 2/3, p. 249
- By:
- Publication type:
- Article