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Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 253, doi. 10.1134/1.1262443
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- Article
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 597, doi. 10.1134/1.1261764
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- Article
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.
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- Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417
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- Article