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3.8 THz Quantum Cascade Laser Grown by Metalorganic Vapor Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S159, doi. 10.1134/S1063785023900637
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- Article
Temperature Degradation of 2.3, 3.2 and 4.1 THz Quantum Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 383, doi. 10.1134/S1063782623070059
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- Article
PGM-Free Electrocatalytic Layer Characterization by Electrochemical Impedance Spectroscopy of an Anion Exchange Membrane Water Electrolyzer with Nafion Ionomer as the Bonding Agent.
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- Catalysts (2073-4344), 2023, v. 13, n. 3, p. 554, doi. 10.3390/catal13030554
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On the Operational Conditions' Effect on the Performance of an Anion Exchange Membrane Water Electrolyzer: Electrochemical Impedance Spectroscopy Study.
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- Membranes, 2023, v. 13, n. 2, p. 192, doi. 10.3390/membranes13020192
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- Article
New Designs of Laser Transitions in Terahertz Quantum–Cascade Lasers.
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- Radiophysics & Quantum Electronics, 2022, v. 65, n. 5/6, p. 461, doi. 10.1007/s11141-023-10228-0
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- Article
X-ray Diffraction Analysis of the Structure In<sub>0.53</sub>Ga<sub>0.47</sub>As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer.
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- Crystallography Reports, 2022, v. 67, n. 3, p. 317, doi. 10.1134/S1063774522030075
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- Article
Reduced Graphene Oxide-Supported Pt-Based Catalysts for PEM Fuel Cells with Enhanced Activity and Stability.
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- Catalysts (2073-4344), 2021, v. 11, n. 2, p. 256, doi. 10.3390/catal11020256
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- Article
Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra.
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- Semiconductors, 2020, v. 54, n. 11, p. 1417, doi. 10.1134/S1063782620110093
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- Article
Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates.
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- Optics & Spectroscopy, 2020, v. 128, n. 7, p. 877, doi. 10.1134/S0030400X20070061
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- Article
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates.
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- Crystallography Reports, 2020, v. 65, n. 3, p. 496, doi. 10.1134/S1063774520030104
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- Article
Modeling of the Enzyme—Substrate Complexes of Human Poly(ADP-Ribose) Polymerase 1.
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- Biochemistry (00062979), 2020, v. 85, n. 1, p. 99, doi. 10.1134/S0006297920010095
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- Article
On the Influence of Composition and Structure of Carbon-Supported Pt-SnO2 Hetero-Clusters onto Their Electrocatalytic Activity and Durability in PEMFC.
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- Catalysts (2073-4344), 2019, v. 9, n. 10, p. 803, doi. 10.3390/catal9100803
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- Article
COMPARATIVE STUDY OF Pt-BASED CATALYSTS SUPPORTED ON VARIOUS CARBON SUPPORTS FOR SOLID POLYMER ELECTROLYTE ELECTROCHEMICAL SYSTEMS.
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- Chemical Problems / Kimya Problemləri, 2019, v. 17, n. 4, p. 489, doi. 10.32737/2221-8688-2019-4-489-499
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- Article
OPTIMIZATION OF A REVERSIBLE FUEL CELL OXYGEN ELECTRODE COMPOSITION AND STRUCTURE.
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- Chemical Problems / Kimya Problemləri, 2019, v. 17, n. 4, p. 535, doi. 10.32737/2221-8688-2019-4-535-545
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- Article
Pt/C and Pt/SnOx/C Catalysts for Ethanol Electrooxidation: Rotating Disk Electrode Study.
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- Catalysts (2073-4344), 2019, v. 9, n. 3, p. 271, doi. 10.3390/catal9030271
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- Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
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- Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
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- Article
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates.
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- Semiconductors, 2019, v. 53, n. 2, p. 246, doi. 10.1134/S1063782619020088
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- Article
IRIDIUM CATALYST SUPPORTED ON CONDUCTIVE TITANIUM OXIDES FOR POLYMER ELECTROLYTE MEMBRANE ELECTROLYSIS.
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- Chemical Problems / Kimya Problemləri, 2019, v. 17, n. 1, p. 9, doi. 10.32737/2221-8688-2019-1-9-15
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- Article
Implantable cardioverter-defibrillator therapies are associated with increased incidence of depression and mortality: Authors reply.
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- Archives of the Turkish Society of Cardiology / Türk Kardiyoloji Derneği Arşivi, 2018, v. 46, n. 8, p. 742
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- Article
Depression and all-cause mortality in patients with congestive heart failure and an implanted cardiac device.
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- Archives of the Turkish Society of Cardiology / Türk Kardiyoloji Derneği Arşivi, 2018, v. 46, n. 6, p. 479, doi. 10.5543/tkda.2018.04134
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- Article
Reduced Graphene Oxide and Its Modifications as Catalyst Supports and Catalyst Layer Modifiers for PEMFC.
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- Materials (1996-1944), 2018, v. 11, n. 8, p. 1405, doi. 10.3390/ma11081405
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- Article
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al<sub>0.32</sub>Ga<sub>0.68</sub>N HEMT-Heterostructures by the Williamson-Hall Method.
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- Semiconductors, 2018, v. 52, n. 6, p. 734, doi. 10.1134/S1063782618060209
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- Article
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
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- Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
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- Article
Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
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- Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
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- Article
Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 27, p. -1, doi. 10.1142/S0217979217501958
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- Article
Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 4, p. 589, doi. 10.1134/S1063774517030063
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- Article
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.
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- Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100
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- Article
X-ray analysis of multilayer InAlAs/InGaAs/InAlAs HEMT heterostructures with InAs nanoinsert in quantum well.
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- Crystallography Reports, 2017, v. 62, n. 3, p. 355, doi. 10.1134/S1063774517030026
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- Article
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
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- Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
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- Article
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.
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- Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071
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Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.
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- Crystallography Reports, 2017, v. 62, n. 1, p. 82, doi. 10.1134/S1063774517010072
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- Article
High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2016, v. 10, n. 3, p. 495, doi. 10.1134/S1027451016030095
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- Article
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode.
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- Semiconductors, 2016, v. 50, n. 4, p. 559, doi. 10.1134/S1063782616040242
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- Article
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081
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- Article
Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.
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- Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122
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Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.
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- Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131
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- Article
Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.
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- Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062
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Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.
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- 2015
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- Erratum
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well.
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- Semiconductors, 2015, v. 49, n. 2, p. 234, doi. 10.1134/S1063782615020086
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- Article
Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well.
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- Crystallography Reports, 2014, v. 59, n. 6, p. 900, doi. 10.1134/S1063774514060108
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- Article
Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.
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- Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070
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- Article
Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures InAlAs/InGaAs/InAlAs containing superlattices with different numbers of periods in the metamorphic buffer.
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- Crystallography Reports, 2014, v. 59, n. 3, p. 425, doi. 10.1134/S1063774514030092
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- Article
Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.
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- Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078
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- Article
X-Ray diffractometry of metamorphic nanoheterostructures.
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- Crystallography Reports, 2014, v. 59, n. 2, p. 258, doi. 10.1134/S1063774514020096
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- Article
Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.
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- Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138
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- Article
Electrical and structural characteristics of metamorphic In<sub>0.38</sub>Al<sub>0.62</sub>As/In<sub>0.37</sub>Ga<sub>0.63</sub>As/In<sub>0.38</sub>Al<sub>0.62</sub>As HEMT nanoheterostructures.
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- Crystallography Reports, 2013, v. 58, n. 6, p. 914, doi. 10.1134/S1063774513060114
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- Article
Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations.
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- Semiconductors, 2013, v. 47, n. 7, p. 997, doi. 10.1134/S1063782613070075
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- Article
Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures.
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- Semiconductors, 2013, v. 47, n. 4, p. 532, doi. 10.1134/S1063782613040076
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- Article
Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts.
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- Semiconductors, 2013, v. 47, n. 3, p. 372, doi. 10.1134/S1063782613030263
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- Article
Structural and electrophysical analysis of MHEMT InAlAs/InGaAs nanoheterostructures with different strain distributions in metamorphic buffer.
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- Crystallography Reports, 2012, v. 57, n. 6, p. 841, doi. 10.1134/S1063774512060028
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- Article