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Field-assisted sintering of effective materials for alternative power engineering.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 7, p. 658, doi. 10.1134/S1063785017070185
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Temperature fields control in the process of spark plasma sintering of thermoelectrics.
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- Technical Physics, 2017, v. 62, n. 4, p. 604, doi. 10.1134/S1063784217040053
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- Article
Temperature and current density distributions at spark plasma sintering of inhomogeneous samples.
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- Technical Physics, 2016, v. 61, n. 1, p. 68, doi. 10.1134/S1063784216010072
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Application of the solution-melt method for obtaining composite materials consisting of a metal matrix and CrSi microcrystals.
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- Technical Physics, 2016, v. 61, n. 1, p. 153, doi. 10.1134/S1063784216010205
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- Article
Doping and defect formation in thermoelectric ZnSb doped with copper.
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- Semiconductors, 2014, v. 48, n. 12, p. 1571, doi. 10.1134/S1063782614120161
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- Article
On fabrication of functionally graded thermoelectric materials by spark plasma sintering.
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- Technical Physics Letters, 2014, v. 40, n. 11, p. 972, doi. 10.1134/S1063785014110030
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- Article
Anisotropic layered high-temperature thermoelectric materials based on the two-phase CrSi-β-FeSi system.
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- Technical Physics, 2014, v. 59, n. 8, p. 1209, doi. 10.1134/S1063784214080222
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- Article
The Influence of Grain Boundary Scattering on Thermoelectric Properties of MgSi and MgSiSn.
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- Journal of Electronic Materials, 2013, v. 42, n. 7, p. 1707, doi. 10.1007/s11664-012-2403-0
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- Article
Structure and Transport Properties of Bulk Nanothermoelectrics Based on BiSbTe Fabricated by SPS Method.
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- Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2110, doi. 10.1007/s11664-013-2536-9
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- Article
Bulk Nanostructured Polycrystalline p-Bi-Sb-Te Thermoelectrics Obtained by Mechanical Activation Method with Hot Pressing.
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- Journal of Electronic Materials, 2010, v. 39, n. 9, p. 1650, doi. 10.1007/s11664-010-1250-0
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- Article
Transport Coefficients of n-Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> in a Two-Band Model of the Electron Spectrum.
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- Semiconductors, 2005, v. 39, n. 9, p. 1023, doi. 10.1134/1.2042591
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- Article
Calculation of the Thermoelectric Figure of Merit for Multilayer Structures with Quantum Wells in the Case of Carrier Scattering by Polar Optical Phonons.
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- Semiconductors, 2004, v. 38, n. 10, p. 1212, doi. 10.1134/1.1808831
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- Article
Thermoelectric Figure of Merit of a p–n Junction.
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- Semiconductors, 2001, v. 35, n. 10, p. 1161, doi. 10.1134/1.1410657
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- Article
An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers.
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- Semiconductors, 2000, v. 34, n. 10, p. 1214, doi. 10.1134/1.1317586
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- Article