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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 3, p. 1118, doi. 10.3390/ma15031118
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
Graphene/AlGaN/GaN RF Switch.
- Published in:
- Micromachines, 2021, v. 12, n. 11, p. 1343, doi. 10.3390/mi12111343
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- Article
Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 13, p. 6053, doi. 10.3390/app11136053
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- Article
Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.
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- Micromachines, 2021, v. 12, n. 6, p. 721, doi. 10.3390/mi12060721
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- Article
AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
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- Micromachines, 2020, v. 11, n. 12, p. 1131, doi. 10.3390/mi11121131
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- Article
Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures.
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- Materials (1996-1944), 2020, v. 13, n. 18, p. 4140, doi. 10.3390/ma13184140
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- Publication type:
- Article
AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.
- Published in:
- Micromachines, 2018, v. 9, n. 11, p. 546, doi. 10.3390/mi9110546
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- Publication type:
- Article
Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1162, doi. 10.1002/pssa.201431724
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- Article