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Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride.
- Published in:
- JETP Letters, 2009, v. 89, n. 2, p. 73, doi. 10.1134/S0021364009020052
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- Article
Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride.
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- Technical Physics Letters, 2009, v. 35, n. 10, p. 948, doi. 10.1134/S1063785009100216
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- Article
MOVPE of structures with aluminum nanocluster layers in a GaAs matrix.
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- Technical Physics Letters, 2007, v. 33, n. 5, p. 444, doi. 10.1134/S1063785007050252
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- Article
Plasmaenhanced chemical vapor deposition of 99.95 28Si in form of nano and polycrystals using silicon tetrafluoride precursor.
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- Crystal Research & Technology, 2010, v. 45, n. 9, p. 983
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- Article
PECVD growth of crystalline silicon from its tetrafluoride.
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- Crystal Research & Technology, 2010, v. 45, n. 9, p. 899, doi. 10.1002/crat.201000090
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- Article
Optical monitoring of technological parameters in metal-organic vapor-phase epitaxy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2008, v. 2, n. 4, p. 587, doi. 10.1134/S1027451008040174
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- Article
Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2008, v. 2, n. 4, p. 514, doi. 10.1134/S1027451008040022
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- Article
Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride.
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- Semiconductors, 2009, v. 43, n. 7, p. 968, doi. 10.1134/S1063782609070288
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- Article
Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters.
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- Semiconductors, 2007, v. 41, n. 8, p. 909, doi. 10.1134/S1063782607080088
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- Article