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GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters.
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- Technical Physics, 2024, v. 69, n. 2, p. 249, doi. 10.1134/S106378422401016X
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- Article
Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures.
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- Technical Physics Letters, 2018, v. 44, n. 3, p. 260, doi. 10.1134/S1063785018030240
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- Article
Determining the normal and lateral dark current components in n-p photodiodes based on p-Cd<sub> x</sub>Hg<sub>1 − x</sub>Te heteroepitaxial structures with x = 0.22.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 552, doi. 10.1134/S1063785009060200
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- Article
Forming n-p junctions based on p-CdHgTe with low charge carrier density.
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- Technical Physics Letters, 2006, v. 32, n. 9, p. 802, doi. 10.1134/S1063785006090203
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- Article
Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe.
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- Semiconductors, 2006, v. 40, n. 6, p. 642, doi. 10.1134/S1063782606060054
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- Article
Mobility of Minority Charge Carriers in p-HgCdTe Films.
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- Semiconductors, 2004, v. 38, n. 5, p. 514, doi. 10.1134/1.1755881
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- Article
Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov - de Haas Oscillation Method.
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- Russian Physics Journal, 2018, v. 61, n. 7, p. 1202, doi. 10.1007/s11182-018-1518-z
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- Article
AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy.
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- Technical Physics Letters, 2020, v. 46, n. 2, p. 154, doi. 10.1134/S1063785020020285
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- Article
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 761, doi. 10.1134/S1063785019080108
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- Article