Works by Preobrazhenskii, V. V.
1
- Measurement Techniques, 2024, v. 66, n. 10, p. 776, doi. 10.1007/s11018-024-02291-4
- Zharov, M. V.;
- Preobrazhenskii, E. V.
- Article
2
- Crystallography Reports, 2002, v. 47, n. 7, p. S118, doi. 10.1134/1.1529966
- Lavrent’eva, L. G.;
- Vilisova, M. D.;
- Preobrazhenskiı, V. V.;
- Chaldyshev, V.V.
- Article
3
- Optics & Spectroscopy, 2019, v. 126, n. 5, p. 492, doi. 10.1134/S0030400X19050151
- Kosarev, A. N.;
- Chaldyshev, V. V.;
- Kondikov, A. A.;
- Vartanyan, T. A.;
- Toropov, N. A.;
- Gladskikh, I. A.;
- Gladskikh, P. V.;
- Akimov, I.;
- Bayer, M.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
4
- Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213
- Nastovjak, A. G.;
- Shwartz, N. L.;
- Emelyanov, E. A.;
- Petrushkov, M. O.;
- Vasev, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.
- Article
5
- Semiconductors, 2020, v. 54, n. 12, p. 1548, doi. 10.1134/S1063782620120295
- Petrushkov, M. O.;
- Abramkin, D. S.;
- Emelyanov, E. A.;
- Putyato, M. A.;
- Vasev, A. V.;
- Loshkarev, D. I.;
- Yesin, M. Yu.;
- Komkov, O. S.;
- Firsov, D. D.;
- Preobrazhenskii, V. V.
- Article
6
- Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304
- Utochkin, V. V.;
- Fadeev, M. A.;
- Krishtopenko, S. S.;
- Rumyantsev, V. V.;
- Aleshkin, V. Ya.;
- Dubinov, A. A.;
- Morozov, S. V.;
- Semyagin, B. R.;
- Putyato, M. A.;
- Emelyanov, E. A.;
- Preobrazhenskii, V. V.;
- Gavrilenko, V. I.
- Article
7
- Semiconductors, 2020, v. 54, n. 1, p. 108, doi. 10.1134/S1063782620010133
- Legan, D. M.;
- Pchelyakov, O. P.;
- Preobrazhenskii, V. V.
- Article
8
- Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021
- Abramkin, D. S.;
- Petrushkov, M. O.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Emelyanov, E. A.;
- Preobrazhenskii, V. V.;
- Gutakovskii, A. K.;
- Shamirzaev, T. S.
- Article
9
- Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092
- Emelyanov, E. A.;
- Vasev, A. V.;
- Semyagin, B. R.;
- Yesin, M. Yu.;
- Loshkarev, I. D.;
- Vasilenko, A. P.;
- Putyato, M. A.;
- Petrushkov, M. O.;
- Preobrazhenskii, V. V.
- Article
10
- Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
11
- Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354
- Vasev, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.;
- Bakarov, A. K.;
- Toropov, A. I.
- Article
12
- Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109
- Krishtopenko, S.;
- Ikonnikov, A.;
- Maremyanin, K.;
- Bovkun, L.;
- Spirin, K.;
- Kadykov, A.;
- Marcinkiewicz, M.;
- Ruffenach, S.;
- Consejo, C.;
- Teppe, F.;
- Knap, W.;
- Semyagin, B.;
- Putyato, M.;
- Emelyanov, E.;
- Preobrazhenskii, V.;
- Gavrilenko, V.
- Article
13
- Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
14
- Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154
- Kosarev, A.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
15
- Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
- Ushanov, V.;
- Chaldyshev, V.;
- Bert, N.;
- Nevedomsky, V.;
- Il'inskaya, N.;
- Lebedeva, N.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
16
- Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148
- Novikov, V.;
- Preobrazhenskii, V.;
- Ivonin, I.
- Article
17
- Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
18
- Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
- Abramkin, D.;
- Putyato, M.;
- Gutakovskii, A.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Shamirzaev, T.
- Article
19
- Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
- Lukin, P.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
20
- Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
- Nevedomskii, V.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
21
- Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
- Nevedomskii, V. N.;
- Bert, N. A.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
22
- Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
- Bert, N. A.;
- Kolesnikova, A. L.;
- Nevedomsky, V. N.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Romanov, A. E.;
- Seleznev, V. M.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
- Article
23
- Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211
- Chaldyshev, V. V.;
- Yagovkina, M. A.;
- Baidakova, M. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
24
- Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270
- Bobrovnikova, I. A.;
- Ivonin, I. V.;
- Novikov, V. A.;
- Preobrazhenskii, V. V.
- Article
25
- Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274
- Boitsov, A.;
- Bert, N.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
- Article
26
- Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589
- Brunkov, P. N.;
- Gutkin, A. A.;
- Chaldyshev, V. V.;
- Bert, N. N.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
27
- Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
- Vilisova, M. D.;
- Kunitsyn, A. E.;
- Lavrent’eva, L. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Toropov, S. E.;
- Chaldyshev, V. V.
- Article
28
- Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Chernigovskiı, A. V.;
- Suvorova, A. A.;
- Bert, N. A.;
- Konnikov, S. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
29
- Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947
- Volodin, V. A.;
- Efremov, M. D.;
- Preobrazhenskiı, V. V.;
- Semyagin, B. R.;
- Bolotov, V. V.;
- Sachkov, V. A.
- Article
30
- Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869
- Kunitsyn, A. E.;
- Chaldyshev, V. V.;
- Vul’, S. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
31
- Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790
- Vilisova, M. D.;
- Ivonin, I. V.;
- Lavrentieva, L. G.;
- Subach, S. V.;
- Yakubenya, M. P.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Musikhin, Yu. G.;
- Chaldyshev, V. V.
- Article
32
- Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626
- Drichko, I. L.;
- D’yakonov, A. M.;
- Smirnov, I. Yu.;
- Preobrazhenskiı, V. V.;
- Toropov, A. I.
- Article
33
- Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561
- Chaldyshev, V. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Bert, N. A.;
- Kunitsyn, A. E.;
- Musikhin, Yu. G.;
- Tret’yakov, V. V.;
- Werner, P.
- Article
34
- Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563
- Brunkov, P. N.;
- Chaldyshev, V. V.;
- Bert, N. A.;
- Suvorova, A. A.;
- Konnikov, S. G.;
- Chernigovskiı, A. V.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
- Article
35
- Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483
- Bert, N. A.;
- Musikhin, Yu. G.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Suvorova, A. A.;
- Chaldyshev, V. V.;
- Werner, R.
- Article
36
- Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Tret'yakov, V. V.;
- Faleev, N. N.
- Article
37
- Glass & Ceramics, 2011, v. 67, n. 9/10, p. 271, doi. 10.1007/s10717-011-9278-z
- Lukin, E.;
- Anufrieva, E.;
- Popova, N.;
- Morozov, B.;
- Preobrazhenskii, V.;
- Bezlepkin, V.;
- Ukhvatova, L.;
- Brzhezinskii, G.
- Article
38
- Technical Physics, 2019, v. 64, n. 7, p. 1010, doi. 10.1134/S106378421907020X
- Putyato, M. A.;
- Valisheva, N. A.;
- Petrushkov, M. O.;
- Preobrazhenskii, V. V.;
- Chistokhin, I. B.;
- Semyagin, B. R.;
- Emel'yanov, E. A.;
- Vasev, A. V.;
- Skachkov, A. F.;
- Yurko, G. I.;
- Nesterenko, I. I.
- Article
39
- Technical Physics, 1997, v. 42, n. 12, p. 1395, doi. 10.1134/1.1258884
- Zhuravlev, K. S.;
- Shamirzaev, T. S.;
- Preobrazhenskiı, V. V.;
- Semyagin, B. R.;
- Kostyuchenko, V. R.
- Article
40
- Nanomaterials (2079-4991), 2023, v. 13, n. 5, p. 910, doi. 10.3390/nano13050910
- Abramkin, Demid S.;
- Petrushkov, Mikhail O.;
- Bogomolov, Dmitrii B.;
- Emelyanov, Eugeny A.;
- Yesin, Mikhail Yu.;
- Vasev, Andrey V.;
- Bloshkin, Alexey A.;
- Koptev, Eugeny S.;
- Putyato, Mikhail A.;
- Atuchin, Victor V.;
- Preobrazhenskii, Valery V.
- Article
41
- Nanomaterials (2079-4991), 2022, v. 12, n. 24, p. 4449, doi. 10.3390/nano12244449
- Petrushkov, Mikhail O.;
- Abramkin, Demid S.;
- Emelyanov, Eugeny A.;
- Putyato, Mikhail A.;
- Komkov, Oleg S.;
- Firsov, Dmitrii D.;
- Vasev, Andrey V.;
- Yesin, Mikhail Yu.;
- Bakarov, Askhat K.;
- Loshkarev, Ivan D.;
- Gutakovskii, Anton K.;
- Atuchin, Victor V.;
- Preobrazhenskii, Valery V.
- Article
42
- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 315, doi. 10.1142/S0219581X07004857
- KOVALYOV, A. A.;
- PCHELYAKOV, O. P.;
- PREOBRAZHENSKII, V. V.;
- PUTYATO, M. M.;
- RUBTSOVA, N. N.;
- SOROKIN, E.;
- SOROKINA, I. T.
- Article
43
- Technical Physics Letters, 2020, v. 46, n. 2, p. 161, doi. 10.1134/S1063785020020194
- Emelyanov, E. A.;
- Nastovjak, A. G.;
- Petrushkov, M. O.;
- Esin, M. Yu.;
- Gavrilova, T. A.;
- Putyato, M. A.;
- Schwartz, N. L.;
- Shvets, V. A.;
- Vasev, A. V.;
- Semyagin, B. R.;
- Preobrazhenskii, V. V.
- Article
44
- Technical Physics Letters, 2018, v. 44, n. 7, p. 612, doi. 10.1134/S1063785018070258
- Petrushkov, M. O.;
- Putyato, M. A.;
- Chistokhin, I. B.;
- Semyagin, B. R.;
- Emel’yanov, E. A.;
- Esin, M. Yu.;
- Gavrilova, T. A.;
- Vasev, A. V.;
- Preobrazhenskii, V. V.
- Article
45
- Technical Physics Letters, 2016, v. 42, n. 2, p. 113, doi. 10.1134/S1063785016020048
- Borisenko, I.;
- Demidov, V.;
- Klimov, A.;
- Ovsyannikov, G.;
- Konstantinyan, K.;
- Nikitov, S.;
- Preobrazhenskii, V.;
- Tiercelin, N.;
- Pernod, P.
- Article
46
- Russian Physics Journal, 2014, v. 57, n. 3, p. 359, doi. 10.1007/s11182-014-0247-1
- Emel'yanov, Е.;
- Kokhanenko, А.;
- Abramkin, D.;
- Pchelyakov, O.;
- Putyato, М.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Vasilenko, A.;
- Feklin, D.;
- Niu, Zhicuan;
- Ni, Haiqiao
- Article
47
- Russian Physics Journal, 2013, v. 56, n. 1, p. 55, doi. 10.1007/s11182-013-9994-7
- Emelyanov, E.;
- Kokhanenko, A.;
- Pchelyakov, O.;
- Loshkarev, I.;
- Seleznev, V.;
- Putyato, M.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Niu, Zhicuan;
- Ni, Haiqiao
- Article
48
- Russian Physics Journal, 2011, v. 53, n. 9, p. 906, doi. 10.1007/s11182-011-9509-3
- Putyato, M. A.;
- Semyagin, B. R.;
- Emel'yanov, E. A.;
- Pakhanov, N. A.;
- Preobrazhenskii, V. V.
- Article
49
- Russian Physics Journal, 2008, v. 51, n. 9, p. 887, doi. 10.1007/s11182-009-9140-8
- Vasev, A. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Seleznev, V. A.;
- Preobrazhenskii, V. V.
- Article
50
- Russian Physics Journal, 2006, v. 49, n. 12, p. 1334, doi. 10.1007/s11182-006-0263-x
- Lavrentieva, L.;
- Vilisova, M.;
- Bobrovnikova, I.;
- Ivonin, I.;
- Preobrazhenskii, V.;
- Chaldyshev, V.
- Article
