Works matching AU Preobrazhenskii, V. V.

Results: 75

GaSb/InGaAsSb/GaSb SINGLE AND MULTIPLE QUANTUM WELLS:: OPTICAL PROPERTIES ENGINEERING AND APPLICATION.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 315, doi. 10.1142/S0219581X07004857

By:

KOVALYOV, A. A.;
PCHELYAKOV, O. P.;
PREOBRAZHENSKII, V. V.;
PUTYATO, M. M.;
RUBTSOVA, N. N.;
SOROKIN, E.;
SOROKINA, I. T.

Publication type:

Article

Control of technological parameters in the process of ribbed panel forging: use of measuring equipment and mathematical modeling methods.

Published in:

Measurement Techniques, 2024, v. 66, n. 10, p. 776, doi. 10.1007/s11018-024-02291-4

By:

Zharov, M. V.;
Preobrazhenskii, E. V.

Publication type:

Article

Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters.

Published in:

Semiconductors, 2000, v. 34, n. 9, p. 1068, doi. 10.1134/1.1309425

By:

Brunkov, P. N.;
Chaldyshev, V. V.;
Chernigovskiı, A. V.;
Suvorova, A. A.;
Bert, N. A.;
Konnikov, S. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Transverse Optical Phonon Splitting in GaAs/AlAs Superlattices Grown on the GaAs(311) Surface Studied by the Method of Raman Light Scattering.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 61, doi. 10.1134/1.1187947

By:

Volodin, V. A.;
Efremov, M. D.;
Preobrazhenskiı, V. V.;
Semyagin, B. R.;
Bolotov, V. V.;
Sachkov, V. A.

Publication type:

Article

Influence of indium doping on the formation of silicon–(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures.

Published in:

Semiconductors, 1999, v. 33, n. 10, p. 1080, doi. 10.1134/1.1187869

By:

Kunitsyn, A. E.;
Chaldyshev, V. V.;
Vul’, S. P.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 824, doi. 10.1134/1.1187790

By:

Vilisova, M. D.;
Ivonin, I. V.;
Lavrentieva, L. G.;
Subach, S. V.;
Yakubenya, M. P.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Musikhin, Yu. G.;
Chaldyshev, V. V.

Publication type:

Article

Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626

By:

Drichko, I. L.;
D’yakonov, A. M.;
Smirnov, I. Yu.;
Preobrazhenskiı, V. V.;
Toropov, A. I.

Publication type:

Article

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1036, doi. 10.1134/1.1187561

By:

Chaldyshev, V. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Bert, N. A.;
Kunitsyn, A. E.;
Musikhin, Yu. G.;
Tret’yakov, V. V.;
Werner, P.

Publication type:

Article

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1044, doi. 10.1134/1.1187563

By:

Brunkov, P. N.;
Chaldyshev, V. V.;
Bert, N. A.;
Suvorova, A. A.;
Konnikov, S. G.;
Chernigovskiı, A. V.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485

By:

Chaldyshev, V. V.;
Kunitsyn, A. E.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Tret'yakov, V. V.;
Faleev, N. N.

Publication type:

Article

Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483

By:

Bert, N. A.;
Musikhin, Yu. G.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Suvorova, A. A.;
Chaldyshev, V. V.;
Werner, R.

Publication type:

Article

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

Published in:

Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352

By:

Faleev, N. N.;
Chaldyshev, V. V.;
Kunitsyn, A. E.;
Tret'yakov, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Scattering of phase-conjugate ultrasonic waves by microinclusions in a liquid flow.

Published in:

Acoustical Physics, 2016, v. 62, n. 1, p. 58, doi. 10.1134/S1063771015060111

By:

Shirkovskiy, P.;
Smagin, N.;
Preobrazhenskii, V.;
Pernod, P.

Publication type:

Article

Diagnostics and doppler tomography of liquid flows with ultrasonic phase conjugation.

Published in:

Acoustical Physics, 2009, v. 55, n. 4/5, p. 657, doi. 10.1134/S1063771009040228

By:

Smagin, N. V.;
Pyl'nov, Yu. V.;
Preobrazhenskiĭ, V. L.;
Pernod, P.

Publication type:

Article

Detection of Moving Objects and Flows in Liquids by Ultrasonic Phase Conjugation.

Published in:

Acoustical Physics, 2005, v. 51, n. 1, p. 105, doi. 10.1134/1.1851635

By:

Pyl'nov, Yu. V.;
Pernod, P.;
Preobrazhenskii, V. L.

Publication type:

Article

Radiation Power in the Case of the Parametric Phase Conjugation of Ultrasound in a Magnet.

Published in:

Acoustical Physics, 2000, v. 46, n. 6, p. 746, doi. 10.1134/1.1326734

By:

Preobrazhenskiı, V. L.

Publication type:

Article

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates.

Published in:

Technical Physics Letters, 2020, v. 46, n. 2, p. 161, doi. 10.1134/S1063785020020194

By:

Emelyanov, E. A.;
Nastovjak, A. G.;
Petrushkov, M. O.;
Esin, M. Yu.;
Gavrilova, T. A.;
Putyato, M. A.;
Schwartz, N. L.;
Shvets, V. A.;
Vasev, A. V.;
Semyagin, B. R.;
Preobrazhenskii, V. V.

Publication type:

Article

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source.

Published in:

Technical Physics Letters, 2018, v. 44, n. 7, p. 612, doi. 10.1134/S1063785018070258

By:

Petrushkov, M. O.;
Putyato, M. A.;
Chistokhin, I. B.;
Semyagin, B. R.;
Emel’yanov, E. A.;
Esin, M. Yu.;
Gavrilova, T. A.;
Vasev, A. V.;
Preobrazhenskii, V. V.

Publication type:

Article

Low-Temperature Molecular Beam Epitaxy of GaAs: Influence of Crystallization Conditions on Structure and Properties of Layers.

Published in:

Crystallography Reports, 2002, v. 47, n. 7, p. S118, doi. 10.1134/1.1529966

By:

Lavrent’eva, L. G.;
Vilisova, M. D.;
Preobrazhenskiı, V. V.;
Chaldyshev, V.V.

Publication type:

Article

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells.

Published in:

JETP Letters, 2017, v. 106, n. 11, p. 727, doi. 10.1134/S0021364017230102

By:

Ruffenach, S.;
Krishtopenko, S. S.;
Bovkun, L. S.;
Ikonnikov, A. V.;
Marcinkiewicz, M.;
Consejo, C.;
Potemski, M.;
Piot, B.;
Orlita, M.;
Semyagin, B. R.;
Putyato, M. A.;
Emel’yanov, E. A.;
Preobrazhenskii, V. V.;
Knap, W.;
Gonzalez-Posada, F.;
Boissier, G.;
Tournié, E.;
Teppe, F.;
Gavrilenko, V. I.

Publication type:

Article

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor.

Published in:

JETP Letters, 2017, v. 105, n. 8, p. 508, doi. 10.1134/S0021364017080057

By:

Kononov, A.;
Egorov, S.;
Titova, N.;
Semyagin, B.;
Preobrazhenskii, V.;
Putyato, M.;
Emelyanov, E.;
Deviatov, E.

Publication type:

Article

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion.

Published in:

JETP Letters, 2016, v. 104, n. 1, p. 26, doi. 10.1134/S0021364016130014

By:

Kononov, A.;
Egorov, S.;
Kostarev, V.;
Semyagin, B.;
Preobrazhenskii, V.;
Putyato, M.;
Emelyanov, E.;
Deviatov, E.

Publication type:

Article

Magnetostatic surface waves in a ferrite-ferromagnetic metal layered medium based on yttrium iron garnet epitaxial films and TbCo/FeCo nanostructures.

Published in:

Journal of Communications Technology & Electronics, 2015, v. 60, n. 9, p. 999, doi. 10.1134/S1064226915090028

By:

Churbanov, A.;
Klimov, A.;
Sadovnikov, A.;
Beginin, E.;
Nikitov, S.;
Preobrazhenskii, V.;
Tiercelin, N.;
Pernod, P.

Publication type:

Article

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.

Published in:

Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2013, v. 69, n. 1, p. 30, doi. 10.1107/S2052519213000183

By:

Baidakova, M. V.;
Bert, N. A.;
Chaldyshev, V.V.;
Nevedomsky, V. N.;
Yagovkina, M. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151

By:

Snigirev, L. A.;
Bert, N. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial.

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 615, doi. 10.1134/S1063782623050160

By:

Snigirev, L. A.;
Ushanov, V. I.;
Ivanov, A. A.;
Bert, N. A.;
Kirilenko, D. A.;
Yagovkina, M. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. P.;
Kasatkin, I. A.;
Chaldyshev, V. V.

Publication type:

Article

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155

By:

Semyagin, B. R.;
Kolesnikov, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.;
Popova, T. B.;
Ushanov, V. I.;
Chaldyshev, V. V.

Publication type:

Article

Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213

By:

Nastovjak, A. G.;
Shwartz, N. L.;
Emelyanov, E. A.;
Petrushkov, M. O.;
Vasev, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1548, doi. 10.1134/S1063782620120295

By:

Petrushkov, M. O.;
Abramkin, D. S.;
Emelyanov, E. A.;
Putyato, M. A.;
Vasev, A. V.;
Loshkarev, D. I.;
Yesin, M. Yu.;
Komkov, O. S.;
Firsov, D. D.;
Preobrazhenskii, V. V.

Publication type:

Article

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region.

Published in:

Semiconductors, 2020, v. 54, n. 9, p. 1119, doi. 10.1134/S1063782620090304

By:

Utochkin, V. V.;
Fadeev, M. A.;
Krishtopenko, S. S.;
Rumyantsev, V. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Morozov, S. V.;
Semyagin, B. R.;
Putyato, M. A.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gavrilenko, V. I.

Publication type:

Article

Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 108, doi. 10.1134/S1063782620010133

By:

Legan, D. M.;
Pchelyakov, O. P.;
Preobrazhenskii, V. V.

Publication type:

Article

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gutakovskii, A. K.;
Shamirzaev, T. S.

Publication type:

Article

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092

By:

Emelyanov, E. A.;
Vasev, A. V.;
Semyagin, B. R.;
Yesin, M. Yu.;
Loshkarev, I. D.;
Vasilenko, A. P.;
Putyato, M. A.;
Petrushkov, M. O.;
Preobrazhenskii, V. V.

Publication type:

Article

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213

By:

Ushanov, V. I.;
Chaldyshev, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354

By:

Vasev, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.;
Bakarov, A. K.;
Toropov, A. I.

Publication type:

Article

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells.

Published in:

Semiconductors, 2017, v. 51, n. 1, p. 38, doi. 10.1134/S1063782617010109

By:

Krishtopenko, S.;
Ikonnikov, A.;
Maremyanin, K.;
Bovkun, L.;
Spirin, K.;
Kadykov, A.;
Marcinkiewicz, M.;
Ruffenach, S.;
Consejo, C.;
Teppe, F.;
Knap, W.;
Semyagin, B.;
Putyato, M.;
Emelyanov, E.;
Preobrazhenskii, V.;
Gavrilenko, V.

Publication type:

Article

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253

By:

Ushanov, V.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1499, doi. 10.1134/S1063782616110154

By:

Kosarev, A.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234

By:

Ushanov, V.;
Chaldyshev, V.;
Bert, N.;
Nevedomsky, V.;
Il'inskaya, N.;
Lebedeva, N.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Effect of the growth temperature on the statistical parameters of GaN surface morphology.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 872, doi. 10.1134/S1063782614070148

By:

Novikov, V.;
Preobrazhenskii, V.;
Ivonin, I.

Publication type:

Article

Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198

By:

Ushanov, V.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

New system of self-assembled GaSb/GaP quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020

By:

Abramkin, D.;
Putyato, M.;
Gutakovskii, A.;
Semyagin, B.;
Preobrazhenskii, V.;
Shamirzaev, T.

Publication type:

Article

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089

By:

Lukin, P.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Electron microscopy of GaAs Structures with InAs and as quantum dots.

Published in:

Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104

By:

Nevedomskii, V.;
Bert, N.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.

Published in:

Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082

By:

Nevedomskii, V. N.;
Bert, N. A.;
Chaldyshev, V. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236

By:

Bert, N. A.;
Kolesnikova, A. L.;
Nevedomsky, V. N.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Romanov, A. E.;
Seleznev, V. M.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1078, doi. 10.1134/S1063782609080211

By:

Chaldyshev, V. V.;
Yagovkina, M. A.;
Baidakova, M. V.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article

Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270

By:

Bobrovnikova, I. A.;
Ivonin, I. V.;
Novikov, V. A.;
Preobrazhenskii, V. V.

Publication type:

Article

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus.

Published in:

Semiconductors, 2009, v. 43, n. 2, p. 266, doi. 10.1134/S1063782609020274

By:

Boitsov, A.;
Bert, N.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As–Sb Nanoclusters.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1013, doi. 10.1134/1.2042589

By:

Brunkov, P. N.;
Gutkin, A. A.;
Chaldyshev, V. V.;
Bert, N. N.;
Konnikov, S. G.;
Preobrazhenskiı, V. V.;
Putyato, M. A.;
Semyagin, B. R.

Publication type:

Article