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Works by Poroshin, V. M.

Results: 2

1

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 256, doi. 10.15407/spqeo21.03.256

By:

Vinoslavskii, M. M.;
Belevskii, P. A.;
Poroshin, V. M.;
Pilipchuk, O. S.;
Kochelap, V. O.

Publication type:

Article

2

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 331

By:

Neimash, V. B.;
Poroshin, V. M.;
Ye. Shepeliavyi, P.;
Yukhymchuk, V. O.;
Melnyk, V. V.;
Makara, V. A.;
Kuzmich, A. G.

Publication type:

Article