Works by Popov, V. P.

Results: 54

Noise-induced synchronization of spatiotemporal chaos in the Ginzburg-Landau equation.
Published in:
Journal of Experimental & Theoretical Physics, 2008, v. 107, n. 5, p. 899, doi. 10.1134/S1063776108110228
By:
- Koronovskiĭ, A. A.;
- Popov, P. V.;
- Hramov, A. E.
Publication type:
Article
Stochastic transport through complex comb structures.
Published in:
Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 5, p. 999, doi. 10.1134/S1063776108050178
By:
- Zaburdaev, V. Yu.;
- Popov, P. V.;
- Romanov, A. S.;
- Chukbar, K. V.
Publication type:
Article
Generalized chaotic synchronization in coupled Ginzburg-Landau equations.
Published in:
Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 4, p. 654, doi. 10.1134/S1063776106100189
By:
- Koronovskiĭ, A. A.;
- Popov, P. V.;
- Hramov, A. E.
Publication type:
Article
Association of platelet function in hypertensive patients with left ventricular hypertrophy, transient myocardial ischemia, and coronary artery disease.
Published in:
Platelets, 1998, v. 9, n. 3/4, p. 191, doi. 10.1080/09537109876672
By:
- Z. Gabbasov Ye. Parfyonova E. Popov I. Gavrilov V. Anuchin P. Dubov Ye. Djakonova
Publication type:
Article
Extrusion of Mixtures for the Construction Industry by 3D Printing.
Published in:
Russian Engineering Research, 2023, v. 43, n. 1, p. 107, doi. 10.3103/S1068798X23020168
By:
- Klyuev, S. V.;
- Antsiferov, S. I.;
- Klyuev, A. V.;
- Shorstova, E. S.;
- Karachevtseva, A. V.;
- Popov, V. P.
Publication type:
Article
Thermal Expansion of Sm–Tb Orthoferrites in the Region of the Spin Reorientation Transition.
Published in:
Crystallography Reports, 2000, v. 45, n. 2, p. 300, doi. 10.1134/1.171184
By:
- Lomako, I. D.;
- Popov, V. P.
Publication type:
Article
Indicator minerals of the sedimentary provinces of the northern Indian Ocean.
Published in:
International Geology Review, 1982, v. 24, n. 11, p. 1287, doi. 10.1080/00206818209451071
By:
- Popov, V. P.;
- Sval'nov, V. N.
Publication type:
Article
Accelerator of the ??-12? neutron generator as an implanter of hydrogen ions.
Published in:
Instruments & Experimental Techniques, 2005, v. 48, n. 1, p. 109, doi. 10.1007/s10786-005-0021-2
By:
- Stepovik, A. P.;
- Mokichev, G. V.;
- Magda, E. P.;
- Kiryushkin, S. V.;
- Kozikov, A. N.;
- Semkov, A. L.;
- Kurochkin, A. V.;
- Lukin, A. V.;
- Khmel'nitskii, D. V.;
- Popov, V. P.
Publication type:
Article
Thermal Strain Effects in YBa2Cu3O6+δ Superconductors.
Published in:
Physica Status Solidi (B), 1994, v. 182, n. 1, p. 183, doi. 10.1002/pssb.2221820119
By:
- Nechiporenko, I. N.;
- Popov, V. P.;
- Sirenko, V. A.
Publication type:
Article
Radiative Recombination at Centres in Germanium-Silicon Solid Solutions.
Published in:
Physica Status Solidi (B), 1985, v. 129, n. 1, p. 313, doi. 10.1002/pssb.2221290131
By:
- Lyutovich, A. S.;
- Lyutovich, K. L.;
- Popov, V. P.;
- Safronov, L. N.
Publication type:
Article
Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing.
Published in:
Semiconductors, 2022, v. 56, n. 3, p. 223, doi. 10.1134/S1063782622020166
By:
- Tyschenko, I. E.;
- Spesivtsev, E. V.;
- Shklyaev, A. A.;
- Popov, V. P.
Publication type:
Article
Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.
Published in:
Semiconductors, 2022, v. 56, n. 3, p. 215, doi. 10.1134/S1063782622020154
By:
- Tyschenko, I. E.;
- Khmelnitsky, R. A.;
- Saraykin, V. V.;
- Volodin, V. A.;
- Popov, V. P.
Publication type:
Article
Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.
Published in:
Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Si, Zh.;
- Popov, V. P.
Publication type:
Article
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262
By:
- Tyschenko, I. E.;
- Volodin, V. A.;
- Popov, V. P.
Publication type:
Article
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238
By:
- Tyschenko, I. E.;
- Zhanaev, E. D.;
- Popov, V. P.
Publication type:
Article
Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1696, doi. 10.1134/S1063782618130055
By:
- Feklistov, K. V.;
- Cherkov, A. G.;
- Popov, V. P.;
- Fedina, L. I.
Publication type:
Article
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide.
Published in:
Semiconductors, 2018, v. 52, n. 10, p. 1341, doi. 10.1134/S1063782618100160
By:
- Popov, V. P.;
- Antonov, V. A.;
- Vdovin, V. I.
Publication type:
Article
Thermodynamic properties of the trans-1,3,3,3-tetrafluoropropene refrigerant: a method for constructing the equation of state and the tabulated data.
Published in:
Measurement Techniques, 2024, v. 66, n. 10, p. 765, doi. 10.1007/s11018-024-02290-5
By:
- Rykov, S. V.;
- Popov, P. V.;
- Kudryavtseva, I. V.;
- Rykov, V. A.
Publication type:
Article
Unified Fundamental Equation of State of Argon: Construction Technique Within the Framework of Scaling Theory and Tables of Standard Reference Data.
Published in:
Measurement Techniques, 2023, v. 65, n. 11, p. 793, doi. 10.1007/s11018-023-02153-5
By:
- Kolobaev, V. A.;
- Rykov, S. V.;
- Kudryavtseva, I. V.;
- Ustyuzhanin, E. E.;
- Popov, P. V.;
- Rykov, V. A.;
- Kozlov, A. D.
Publication type:
Article
Thermodynamic Properties of R1233zd(E) Refrigerant: Method for Constructing the Fundamental Equation of State and Tabulated Data.
Published in:
Measurement Techniques, 2022, v. 65, n. 5, p. 330, doi. 10.1007/s11018-022-02084-7
By:
- Kolobaev, V. A.;
- Rykov, S. V.;
- Kudryavtseva, I. V.;
- Ustyuzhanin, E. E.;
- Popov, P. V.;
- Rykov, V. A.;
- Kozlov, A. D.
Publication type:
Article
Methodology for Constructing the Equation of State and Thermodynamic Tables for a New Generation Refrigerant.
Published in:
Measurement Techniques, 2021, v. 64, n. 2, p. 86, doi. 10.1007/s11018-021-01901-9
By:
- Kolobaev, V. A.;
- Rykov, S. V.;
- Kudryavtseva, I. V.;
- Ustyuzhanin, E. E.;
- Popov, P. V.;
- Rykov, V. A.;
- Sverdlov, A. V.;
- Kozlov, A. D.
Publication type:
Article
Chaotic Synchronization of Unidirectionally Coupled Electron-Wave Media with Interacting Counterpropagating Waves.
Published in:
Technical Physics, 2005, v. 50, n. 4, p. 385, doi. 10.1134/1.1901774
By:
- Koronovskii, A. A.;
- Popov, P. V.;
- Hramov, A. E.
Publication type:
Article
Oxidation of the zirconium boride-silicon nitride composite in the temperature range 1100–1300°C in air.
Published in:
Glass Physics & Chemistry, 2010, v. 36, n. 2, p. 225, doi. 10.1134/S1087659610020112
By:
- Salikova, A. P.;
- Ban'kovskaya, I. B.;
- Kolovertnov, D. V.;
- Popov, V. P.
Publication type:
Article
70th Birthday of Yuriı Fedorovich Smirnov.
Published in:
Physics of Atomic Nuclei, 2005, v. 68, n. 9, p. 1616, doi. 10.1134/1.2053343
By:
- Asherova, R. M.;
- Balashov, V. V.;
- Blokhintsev, L. D.;
- Korenman, G. Ya.;
- Kukulin, V. V.;
- Lanskoĭ, D. E.;
- Man'ko, V. I.;
- Neudatchin, V. G.;
- Obukhovsky, I. T.;
- Pavlichenkov, I. M.;
- Pomerantsev, V. N.;
- Popov, V. P.;
- Tolstoy, V. N.;
- Shirokov, A. M.;
- Tchuvil'sky, Yu. M.
Publication type:
Article
Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
By:
- Nazarov, A. N.;
- Vasin, A. V.;
- Gordienko, S. O.;
- Lytvyn, P. M.;
- Strelchuk, V. V.;
- Nikolenko, A. S.;
- Stubrov, Yu. Yu.;
- Hirov, A. S.;
- Rusavsky, A. V.;
- Popov, V. P.;
- Lysenko, V. S.
Publication type:
Article
FIELD EFFECT NANOTRANSISTOR ON ULTRATHIN SILICON-ON-INSULATOR.
Published in:
International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 155, doi. 10.1142/S0219581X04001936
By:
- Nastaushev, Yu. V.;
- Gavrilova, T. A.;
- Kachanova, M. M.;
- Naumova, O. V.;
- Antonova, I. V.;
- Popov, V. P.;
- Litvin, L. V.;
- Sheglov, D. V.;
- Latyshev, A. V.;
- Aseev, A. L.
Publication type:
Article
Angular distributions of scattered excited muonic hydrogen atoms.
Published in:
JETP Letters, 2006, v. 83, n. 7, p. 273, doi. 10.1134/S0021364006070034
By:
- Pomerantsev, V. N.;
- Popov, V. P.
Publication type:
Article
Coulomb Deexcitation of Muonic Hydrogen within the Quantum Close-Coupling Method.
Published in:
JETP Letters, 2005, v. 81, n. 11, p. 543, doi. 10.1134/1.2029940
By:
- Korenman, G. Ya.;
- Pomerantsev, V. N.;
- Popov, V. P.
Publication type:
Article
Thermal Expansion of Dilute Solid Solutions of Silver in Aluminium at Low Temperatures.
Published in:
Physica Status Solidi (B), 1975, v. 71, n. 1, p. K95, doi. 10.1002/pssb.2220710163
By:
- Popov, V. P.;
- Pervakov, V. A.
Publication type:
Article
Thermal ekpansion of erbium at low temperatures.
Published in:
Physica Status Solidi (B), 1975, v. 68, n. 2, p. K145, doi. 10.1002/pssb.2220680256
By:
- Petrenko, N. S.;
- Popov, V. P.;
- Pushkarev, E. A.;
- Finkel, V. A.
Publication type:
Article
On the Anomaly of the Thermal Expansion of Holmium near the Curie Temperature.
Published in:
Physica Status Solidi (B), 1973, v. 60, n. 2, p. K87, doi. 10.1002/pssb.2220600251
By:
- Petrenko, N. S.;
- Popov, V. P.
Publication type:
Article
Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.
Published in:
Semiconductors, 2009, v. 43, n. 1, p. 52, doi. 10.1134/S1063782609010114
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Cherkov, A. G.;
- Popov, V. P.
Publication type:
Article
Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 291, doi. 10.1134/S1063782607030104
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Cherkov, A. G.;
- Popov, V. P.
Publication type:
Article
Traps with Near-Midgap Energies at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2004, v. 38, n. 12, p. 1394, doi. 10.1134/1.1836059
By:
- Antonova, I. V.;
- Popov, V. P.;
- Polyakov, V. I.;
- Rukovishnikov, A. I.
Publication type:
Article
Charge Fluctuations at the Bonding Interface in the Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1303, doi. 10.1134/1.1626213
By:
- Antonova, I. V.;
- Stuchinski&ibreve;, V. A.;
- Naumova, O. V.;
- Nikolaev, D. V.;
- Popov, V. P.
Publication type:
Article
Hydrogen-Induced Splitting in Silicon over a Buried Layer Heavily Doped with Boron.
Published in:
Semiconductors, 2003, v. 37, n. 6, p. 620, doi. 10.1134/1.1582524
By:
- Kilanov, D. V.;
- Popov, V. P.;
- Safronov, L. N.;
- Nikiforov, A. I.;
- Sholz, R.
Publication type:
Article
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons.
Published in:
Semiconductors, 2003, v. 37, n. 4, p. 426, doi. 10.1134/1.1568462
By:
- Nikolaev, D. V.;
- Antonova, I. V.;
- Naumova, O. V.;
- Popov, V. P.;
- Smagulova, S. A.
Publication type:
Article
Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields.
Published in:
Semiconductors, 2002, v. 36, n. 7, p. 800, doi. 10.1134/1.1493752
By:
- Nikolaev, D. V.;
- Antonova, I. V.;
- Naumova, O. V.;
- Popov, V. P.;
- Smagulova, S. A.
Publication type:
Article
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
By:
- Galakhov, V. R.;
- Antonova, I. V.;
- Shamin, S. N.;
- Aksenova, V. I.;
- Obodnikov, V. I.;
- Gutakovskiı, A. K.;
- Popov, V. P.
Publication type:
Article
Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 60, doi. 10.1134/1.1434515
By:
- Antonova, I. V.;
- Stano, I.;
- Nikolaev, D. V.;
- Naumova, O. V.;
- Popov, V. P.;
- Skuratov, V. A.
Publication type:
Article
Properties of Silicon-on-Insulator Structures and Devices.
Published in:
Semiconductors, 2001, v. 35, n. 9, p. 1030, doi. 10.1134/1.1403567
By:
- Popov, V. P.;
- Antonova, A. I.;
- Frantsuzov, A. A.;
- Safronov, L. N.;
- Feofanov, G. N.;
- Naumova, O. V.;
- Kilanov, D. V.
Publication type:
Article
Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors.
Published in:
Semiconductors, 2001, v. 35, n. 9, p. 1106, doi. 10.1134/1.1403576
By:
- Chernyavskiı, E. V.;
- Popov, V. P.;
- Pakhmutov, Yu. S.;
- Krasnikov, Yu. I.;
- Safronov, L. N.
Publication type:
Article
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures.
Published in:
Semiconductors, 2001, v. 35, n. 8, p. 912, doi. 10.1134/1.1393026
By:
- Antonova, I. V.;
- Stano, J.;
- Nikolaev, D. V.;
- Naumova, O. V.;
- Popov, V. P.;
- Skuratov, V. A.
Publication type:
Article
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
Published in:
Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
By:
- Antonova, I. V.;
- Stas’, V. F.;
- Popov, V. P.;
- Obodnikov, V. I.;
- Gutakovskiı, A. K.
Publication type:
Article
Thermal Acceptors in Irradiated Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 2, p. 155
By:
- Stas’, V. F.;
- Antonova, I. V.;
- Neustroev, E. P.;
- Popov, V. P.;
- Smirnov, L. S.
Publication type:
Article
Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment.
Published in:
Semiconductors, 1999, v. 33, n. 10, p. 1049, doi. 10.1134/1.1187862
By:
- Antonova, I. V.;
- Popov, V. P.;
- Kilanov, D. V.;
- Neustroev, E. P.;
- Misuk, A.
Publication type:
Article
Formation of oxygen precipitates in silicon.
Published in:
Semiconductors, 1997, v. 31, n. 8, p. 852, doi. 10.1134/1.1187240
By:
- Antonova, I. V.;
- Popov, V. P.;
- Shaımeev, S. S.;
- Misiuk, A.
Publication type:
Article
Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems.
Published in:
Inorganic Materials, 2018, v. 54, n. 1, p. 32, doi. 10.1134/S0020168518010065
By:
- Kuznetsov, V. V.;
- Lozovskii, V. N.;
- Popov, V. P.;
- Rubtsov, E. R.;
- Seredin, B. M.
Publication type:
Article
Electrical Resistivity of Stabilized Polycrystalline Intermetallide Ti67Al33.
Published in:
High Temperature, 2022, v. 60, n. 2, p. 172, doi. 10.1134/S0018151X22020201
By:
- Iskhakov, M. E.;
- Emirov, R. M.;
- Rabadanov, M. Kh.;
- Murlieva, Zh. Kh.;
- Palchaev, D. K.;
- Popov, P. V.
Publication type:
Article
Intermittent generalized synchronization in distributed autooscillatory media described by complex Ginzburg-Landau equations.
Published in:
Technical Physics Letters, 2007, v. 33, n. 9, p. 788, doi. 10.1134/S1063785007090222
By:
- Popov, P. V.
Publication type:
Article