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Silicon‐based passivating contacts: The TOPCon route.
- Published in:
- Progress in Photovoltaics, 2023, v. 31, n. 4, p. 341, doi. 10.1002/pip.3522
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- Article
Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes.
- Published in:
- Advanced Energy Materials, 2022, v. 12, n. 24, p. 1, doi. 10.1002/aenm.202103773
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- Publication type:
- Article
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells.
- Published in:
- Solar RRL, 2023, v. 7, n. 8, p. 1, doi. 10.1002/solr.202200578
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- Publication type:
- Article
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells.
- Published in:
- Solar RRL, 2023, v. 7, n. 8, p. 1, doi. 10.1002/solr.202200578
- By:
- Publication type:
- Article
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells.
- Published in:
- Solar RRL, 2023, v. 7, n. 7, p. 1, doi. 10.1002/solr.202200578
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- Publication type:
- Article
Inline PECVD Deposition of Poly‐Si‐Based Tunnel Oxide Passivating Contacts.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 23, p. N.PAG, doi. 10.1002/pssa.201800449
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- Article