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Record Thick κ(ε)-Ga<sub>2</sub>O<sub>3</sub>Epitaxial Layers Grown on GaN/c-Sapphire.
- Published in:
- Technical Physics, 2023, v. 68, n. 12, p. 689, doi. 10.1134/S1063784223080236
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- Article
Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.
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- Semiconductors, 2004, v. 38, n. 4, p. 472, doi. 10.1134/1.1734677
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- Article
New Azo Dyes for Polycaproamide Based on 2,4,6-Trihydroxytoluene: Synthesis and Properties.
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- Fibre Chemistry, 2017, v. 48, n. 6, p. 462, doi. 10.1007/s10692-017-9817-7
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- Article
Synthesis of Thin Single-Crystalline α-Cr<sub>2</sub>O<sub>3</sub> Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S284, doi. 10.1134/S1063785023010273
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- Article
Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X
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- Article