Found: 29
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Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity.
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- Semiconductors, 2024, v. 58, n. 1, p. 61, doi. 10.1134/S1063782624010135
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- Article
Low-Voltage InP Heterostyristors for 50–150 ns Current Pulses Generation.
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- Technical Physics Letters, 2023, v. 49, p. S231, doi. 10.1134/S106378502390087X
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High-Speed Bridge Photodetectors for the Mid-IR Spectral Region.
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- Journal of Applied Spectroscopy, 2023, v. 90, n. 1, p. 92, doi. 10.1007/s10812-023-01508-8
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Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors.
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- Semiconductors, 2023, v. 57, n. 3, p. 166, doi. 10.1134/S1063782623050159
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- Article
Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures.
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- Semiconductors, 2021, v. 55, n. 5, p. 518, doi. 10.1134/S1063782621050134
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Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing.
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- Semiconductors, 2020, v. 54, n. 8, p. 882, doi. 10.1134/S1063782620080102
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- Article
Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier.
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- Semiconductors, 2020, v. 54, n. 5, p. 529, doi. 10.1134/S1063782620050139
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- Article
Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure.
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- Semiconductors, 2020, v. 54, n. 5, p. 575, doi. 10.1134/S1063782620050140
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- Article
Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures.
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- Semiconductors, 2020, v. 54, n. 5, p. 581, doi. 10.1134/S1063782620050097
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- Article
Specific Features of Carrier Transport in n<sup>+</sup>–n<sup>0</sup>–n<sup>+</sup> Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities.
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- Semiconductors, 2019, v. 53, n. 6, p. 806, doi. 10.1134/S1063782619060241
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- Article
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers.
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- Semiconductors, 2019, v. 53, n. 6, p. 828, doi. 10.1134/S1063782619060162
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- Article
An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures.
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- Technical Physics Letters, 2019, v. 45, n. 4, p. 374, doi. 10.1134/S1063785019040254
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An Analytical Temperature-Dependent Design Model for Contour-Mode MEMS Resonators and Oscillators Verified by Measurements.
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- Sensors (14248220), 2018, v. 18, n. 7, p. 2159, doi. 10.3390/s18072159
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- Article
All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures.
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- Technical Physics Letters, 2017, v. 43, n. 1, p. 101, doi. 10.1134/S1063785017010254
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- Article
Mapping of laser diode radiation intensity by atomic-force microscopy.
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- Technical Physics Letters, 2015, v. 41, n. 9, p. 870, doi. 10.1134/S1063785015090163
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Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers.
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- Semiconductors, 2015, v. 49, n. 8, p. 1083, doi. 10.1134/S1063782615080151
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- Article
Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions.
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- Semiconductors, 2014, v. 48, n. 5, p. 686, doi. 10.1134/S1063782614050212
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- Article
Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures.
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- Semiconductors, 2014, v. 48, n. 5, p. 691, doi. 10.1134/S1063782614050200
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On the control efficiency of a high-power laser thyristor emitting in the 890-910 nm spectral range.
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- Semiconductors, 2014, v. 48, n. 5, p. 697, doi. 10.1134/S1063782614050224
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AlGaAs/GaAs diode lasers (1020-1100 nm) with an asymmetric broadened single transverse mode waveguide.
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- Semiconductors, 2013, v. 47, n. 8, p. 1079, doi. 10.1134/S1063782613080186
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Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well.
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- Technical Physics Letters, 2013, v. 39, n. 4, p. 364, doi. 10.1134/S1063785013040251
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Semiconductor lasers with internal wavelength selection.
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- Semiconductors, 2013, v. 47, n. 1, p. 122, doi. 10.1134/S1063782613010247
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Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers.
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- Semiconductors, 2011, v. 45, n. 10, p. 1378, doi. 10.1134/S1063782611100162
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Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser.
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- Semiconductors, 2011, v. 45, n. 5, p. 663, doi. 10.1134/S1063782611050265
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Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures.
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- Semiconductors, 2011, v. 45, n. 5, p. 673, doi. 10.1134/S1063782611050277
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The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210
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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222
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Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.
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- Semiconductors, 2010, v. 44, n. 6, p. 789, doi. 10.1134/S1063782610060163
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Temperature delocalization of charge carriers in semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 5, p. 661, doi. 10.1134/S1063782610050209
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- Article