Found: 11
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Electrical resistance of individual defects at a topological insulator surface.
- Published in:
- Nature Communications, 2017, v. 8, n. 6, p. 1, doi. 10.1038/ncomms15704
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- Article
Bi<sub>1</sub>Te<sub>1</sub> is a dual topological insulator.
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- Nature Communications, 2017, v. 8, n. 4, p. 14976, doi. 10.1038/ncomms14976
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- Article
Realization of a vertical topological p-n junction in epitaxial Sb<sub>2</sub>Te<sub>3</sub>/Bi<sub>2</sub>Te<sub>3</sub> heterostructures.
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- Nature Communications, 2015, v. 6, n. 11, p. 8816, doi. 10.1038/ncomms9816
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- Article
In situ disentangling surface state transport channels of a topological insulator thin film by gating.
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- NPJ Quantum Materials, 2018, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41535-018-0116-1
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- Article
Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide.
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- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-05823-z
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- Article
Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS<sub>2</sub> bulk crystals.
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- Scientific Reports, 2016, p. 26197, doi. 10.1038/srep26197
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- Article
Subnanometre-wide electron channels protected by topology.
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- Nature Physics, 2015, v. 11, n. 4, p. 338, doi. 10.1038/nphys3264
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- Article
Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe<sub>2</sub>/MoSe<sub>2</sub> heterobilayers.
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- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00420-1
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- Article
Mixed topological semimetals driven by orbital complexity in two-dimensional ferromagnets.
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- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-10930-6
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- Article
Bi<sub>12</sub>Rh<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels.
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- Physica Status Solidi (B), 2022, v. 259, n. 4, p. 1, doi. 10.1002/pssb.202100447
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- Article
Phase-Selective Epitaxy of Trigonal and Orthorhombic Bismuth Thin Films on Si (111).
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- Nanomaterials (2079-4991), 2023, v. 13, n. 14, p. 2143, doi. 10.3390/nano13142143
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- Article