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Mechanism of Solid-Solution Hardening: Quasi-Localization of Dislocation Kinks.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 5, p. 971, doi. 10.1134/S1027451023050087
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Violation of the Arrhenius Law in the Low-temperature Dynamics of an Extended Quasi-One-Dimensional System in a Barrier Structure.
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- Crystallography Reports, 2022, v. 67, n. 2, p. 265, doi. 10.1134/S1063774522020109
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Universal Mechanism of the Strain Aging of Materials with High Peierls Barriers: BCC Metals, Semiconductors and Others.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 1, p. 86, doi. 10.1134/S1027451022010141
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Effective Velocity of the State Switching Front in a Quasi-One-Dimensional Nanosystem upon Multiple New-Phase Domain Formation.
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- Journal of Experimental & Theoretical Physics, 2019, v. 129, n. 2, p. 312, doi. 10.1134/S1063776119070082
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Kinetics of State Switching in Quasi-One-Dimensional Nanosystems. Statistical Model of the Influence of Defects.
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- Crystallography Reports, 2018, v. 63, n. 2, p. 245, doi. 10.1134/S1063774518020190
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Influence of impurity atmosphere on the deformation of silicon crystals.
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- Crystallography Reports, 2017, v. 62, n. 4, p. 622, doi. 10.1134/S1063774517040101
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State switching kinetics for quasi-one-dimensional nanosystems: Effects of Finite length and irradiation.
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- Crystallography Reports, 2017, v. 62, n. 1, p. 113, doi. 10.1134/S1063774517010175
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Dynamic strain aging of the materials characterized by the Peierls plasticity mechanism.
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- Technical Physics, 2016, v. 61, n. 9, p. 1346, doi. 10.1134/S1063784216090188
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Kink model of state switching in quasi-one-dimensional nanosystems.
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- Crystallography Reports, 2015, v. 60, n. 2, p. 252, doi. 10.1134/S1063774515020200
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Criterion for the softening effect in crystalline materials under their doping.
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- Technical Physics, 2013, v. 58, n. 7, p. 978, doi. 10.1134/S1063784213070153
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Domain-size evolution upon switching of the states of a one-dimensional system with defects.
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- Semiconductors, 2013, v. 47, n. 5, p. 628, doi. 10.1134/S1063782613050187
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Effect of defects on the kinetics of the phase transformation in a one-dimensional system: Modified Kolmogorov-Mehl-Johnson theory.
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- Journal of Experimental & Theoretical Physics, 2012, v. 114, n. 6, p. 988, doi. 10.1134/S1063776112050068
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Dynamic interaction of dislocations with impurity subsystem in crystalline materials.
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- Crystallography Reports, 2012, v. 57, n. 3, p. 388, doi. 10.1134/S1063774512030169
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On hardening of crystals by immobilization of dislocations due to mobile impurities.
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- Crystallography Reports, 2011, v. 56, n. 1, p. 61, doi. 10.1134/S1063774510061094
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Mesoscopic variance of dislocation displacements in semiconductor crystals.
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- Semiconductors, 2010, v. 44, n. 10, p. 1258, doi. 10.1134/S1063782610100027
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Statistical description of the motion of dislocation kinks in a random field of impurities adsorbed by a dislocation.
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- Journal of Experimental & Theoretical Physics, 2010, v. 110, n. 1, p. 41, doi. 10.1134/S1063776110010061
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- Article
A statistical description of dislocation mobility at stresses close to the threshold of unlocking from the atmosphere of adsorbed impurities.
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- Crystallography Reports, 2009, v. 54, n. 6, p. 967, doi. 10.1134/S106377450906011X
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Dynamic aging of dislocations in materials with a high crystalline relief: Competition between diffusion and impurity entrainment.
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- Crystallography Reports, 2009, v. 54, n. 1, p. 82, doi. 10.1134/S1063774509010143
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- Article
Threshold stresses for motion of dislocations in extrinsic semiconductors.
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- Semiconductors, 2007, v. 41, n. 6, p. 625, doi. 10.1134/S1063782607060024
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Effect of solid-solution softening of crystalline materials: Review.
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- Crystallography Reports, 2007, v. 52, n. 1, p. 112, doi. 10.1134/S1063774507010130
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Fluctuations of Impurity Composition and Their Role in Dislocation Cross Slip in Crystals.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 801, doi. 10.1134/1.2049399
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A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals.
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- Semiconductors, 2004, v. 38, n. 4, p. 369, doi. 10.1134/1.1734660
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Deformation of Covalent Crystals in the Vicinity of the Yield Drop.
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- Crystallography Reports, 2003, v. 48, n. 6, p. 966, doi. 10.1134/1.1627439
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Different Types of Dislocation Dynamics Resulting from the Dynamic Aging of Dislocations.
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- Technical Physics, 2003, v. 48, n. 7, p. 880, doi. 10.1134/1.1593194
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Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors.
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- Semiconductors, 2002, v. 36, n. 2, p. 121, doi. 10.1134/1.1453422
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Dynamics of Kinks on Dislocations in SiGe Single Crystals.
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- Journal of Experimental & Theoretical Physics, 2002, v. 94, n. 1, p. 108, doi. 10.1134/1.1448613
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A Theory of Sharp Yield Point in Low-Dislocation Crystals.
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- Technical Physics, 2001, v. 46, n. 11, p. 1389, doi. 10.1134/1.1418501
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Analytical Description of the Yield Drop in the Alexander–Haasen Model.
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- Crystallography Reports, 2001, v. 46, n. 5, p. 835, doi. 10.1134/1.1405873
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The Dependence of Anomalous Temperature Peak of a Deforming Stress on Microstructural Parameters.
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- Crystallography Reports, 2001, v. 46, n. 3, p. 474, doi. 10.1134/1.1376480
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Kinetics of State Switching in a Disordered Linear System.
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- Crystallography Reports, 2000, v. 45, n. 4, p. 640, doi. 10.1134/1.1306576
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- Article