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Multimodal Optical Diagnostics of Glycated Biological Tissues.
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- Biochemistry (00062979), 2019, v. 84, n. 1, p. 124, doi. 10.1134/S0006297919140086
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- Article
Generation of ultrabroadband terahertz radiation under optical breakdown of air by two femtosecond pulses of different frequencies.
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- Optics & Spectroscopy, 2009, v. 107, n. 4, p. 538, doi. 10.1134/S0030400X09100075
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- Article
In Vivo Effects of Human Bone Marrow Mesenchymal Stromal Cells on the Development of Experimental B16 Melanoma in Mice.
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- Bulletin of Experimental Biology & Medicine, 2020, v. 168, n. 4, p. 561, doi. 10.1007/s10517-020-04753-5
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- Article
Cloning and characterization of TNKL, a member of tankyrase gene family.
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- Genes & Immunity, 2001, v. 2, n. 1, p. 52, doi. 10.1038/sj.gene.6363722
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- Article
Using atomic-step-structured 6H-SiC(0001) surfaces for the calibration of nanotranslations in scanning probe microscopy.
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- Technical Physics Letters, 2009, v. 35, n. 1, p. 47, doi. 10.1134/S1063785009010143
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- Article
Heteropolytype Structures with SiC Quantum Dots.
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- Technical Physics Letters, 2005, v. 31, n. 12, p. 997, doi. 10.1134/1.2150879
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- Article
An Effective Compact Analyzer of Electron Spin Polarization.
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- Technical Physics Letters, 2004, v. 30, n. 2, p. 157, doi. 10.1134/1.1666970
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- Article
Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface.
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- Technical Physics Letters, 2000, v. 26, n. 9, p. 781, doi. 10.1134/1.1315492
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- Article
Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3–1.4μm Wavelength Range.
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- Technical Physics Letters, 2000, v. 26, n. 7, p. 631, doi. 10.1134/1.1262937
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- Article
Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3μm.
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- Technical Physics Letters, 2000, v. 26, n. 5, p. 423, doi. 10.1134/1.1262866
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- Article
Fabrication of InAs quantum dots on silicon.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 290, doi. 10.1134/1.1262087
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- Article
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy.
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- Technical Physics Letters, 1997, v. 23, n. 11, p. 893, doi. 10.1134/1.1261923
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- Article
Photoluminescence and Photoconductivity of Lead Halide Perovskite Films Modified with Mixed Cellulose Esters.
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- Technical Physics, 2021, v. 66, n. 7, p. 827, doi. 10.1134/S1063784221060025
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- Article
On the Possibility of Studying the Fraction of Inhomogeneities in Optical Nonlinear Media Using Time-Resolved Inline Digital Holography.
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- Technical Physics, 2021, v. 66, n. 5, p. 681, doi. 10.1134/S1063784221050042
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- Article
Aerosol concentrations over the last climatic cycle (160 kyr) from an Antarctic ice core.
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- Nature, 1987, v. 325, n. 6102, p. 318, doi. 10.1038/325318a0
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- Article
On Vivid Manifestations of Perigean Spring Tides in the Atmosphere.
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- Izvestiya, Atmospheric & Oceanic Physics, 2020, v. 56, n. 8, p. 713, doi. 10.1134/S0001433820070075
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- Article
Interaction of iron atoms with the silicon surface coated with a native oxide layer.
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- Technical Physics, 2009, v. 54, n. 8, p. 1210, doi. 10.1134/S1063784209080192
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- Article
The Stability of Mott Polarization Analyzers.
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- Technical Physics, 2001, v. 46, n. 12, p. 1566, doi. 10.1134/1.1427993
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- Article
A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns.
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- Technical Physics, 2000, v. 45, n. 5, p. 618, doi. 10.1134/1.1259686
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- Article
Novel compact 60-kV Mott detector for spin-polarization electron spectroscopy.
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- Technical Physics, 1998, v. 43, n. 8, p. 991, doi. 10.1134/1.1259115
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- Article
System for recording and analysis of reflection high-energy electron diffraction patterns.
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- Technical Physics, 1997, v. 42, n. 8, p. 956, doi. 10.1134/1.1258761
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- Article
APPLICATION OF PHOTOGRAMMETRY FOR DIGITIZING INFORMATION ABOUT CULTURAL HERITAGE IN THE FORM OF DISPLAY HOLOGRAMS.
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- International Archives of the Photogrammetry, Remote Sensing & Spatial Information Sciences, 2022, n. B2, p. 869, doi. 10.5194/isprs-archives-XLIII-B2-2022-869-2022
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- Article
Removal of metal ions from aqueous solution by activated carbons obtained from different raw materials.
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- Journal of Chemical Technology & Biotechnology, 1994, v. 60, n. 2, p. 177, doi. 10.1002/jctb.280600210
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- Article
Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors.
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- Semiconductors, 2023, v. 57, n. 12, p. 524, doi. 10.1134/S1063782623080031
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- Article
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.
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- Semiconductors, 2018, v. 52, n. 7, p. 942, doi. 10.1134/S1063782618070072
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- Article
A Control Device for a Polarized Electromagnet.
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- Russian Electrical Engineering, 2023, v. 94, n. 8, p. 553, doi. 10.3103/S1068371223080151
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- Article
Calculation and Assessment of Dynamic Parameters of ElectromagneticElements of Circuit Breakers.
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- Russian Electrical Engineering, 2020, v. 91, n. 8, p. 475, doi. 10.3103/S1068371220080131
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- Article
Electromagnetic Overcurrent Release with Integrated Armature for Circuit Breaker.
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- Russian Electrical Engineering, 2020, v. 91, n. 8, p. 471, doi. 10.3103/S106837122008012X
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- Article
A Valve Magnetic System with Increased Operational Sensitivity of Overcurrent Release.
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- Russian Electrical Engineering, 2019, v. 90, n. 8, p. 549, doi. 10.3103/S1068371219080108
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- Article
A Design of a Minimized Shell-Type Plunger Constant-Voltage Electromagnet.
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- Russian Electrical Engineering, 2018, v. 89, n. 8, p. 473, doi. 10.3103/S1068371218080138
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- Article
Calculation of Thermobimetallic Releases of Circuit Breakers with Indirect Heating for Currents from 63 to 250 A.
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- Russian Electrical Engineering, 2018, v. 89, n. 8, p. 464, doi. 10.3103/S1068371218080126
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- Article
Calculation of a Valve Magnetic System of Maximum Current Release of a Circuit Breaker.
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- Russian Electrical Engineering, 2018, v. 89, n. 8, p. 459, doi. 10.3103/S1068371218080114
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- Article
Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.
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- Semiconductors, 2009, v. 43, n. 4, p. 447, doi. 10.1134/S1063782609040083
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- Article
Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals.
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- Semiconductors, 2006, v. 40, n. 12, p. 1378, doi. 10.1134/S1063782606120025
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- Article
The formation of natural oxide on the mirrors of GaSb/GaInAsSb/GaAlAsSb laser heterostructures at places of emergence of al-rich layers.
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- Semiconductors, 2006, v. 40, n. 11, p. 1247, doi. 10.1134/S1063782606110017
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- Article
The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4μm.
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- Semiconductors, 2000, v. 34, n. 11, p. 1316, doi. 10.1134/1.1325430
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- Article
Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.
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- Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079
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- Article
Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces.
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- Semiconductors, 2000, v. 34, n. 4, p. 453, doi. 10.1134/1.1188007
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- Article
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic.
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- Semiconductors, 1999, v. 33, n. 10, p. 1054, doi. 10.1134/1.1187863
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- Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
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- Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
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- Article
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy.
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- Semiconductors, 1999, v. 33, n. 6, p. 677, doi. 10.1134/1.1187755
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- Article
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
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- Semiconductors, 1998, v. 32, n. 1, p. 84, doi. 10.1134/1.1187363
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- Article
A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.
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- Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025
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- Article
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams.
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- Semiconductors, 1997, v. 31, n. 8, p. 768, doi. 10.1134/1.1187245
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- Article
Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy.
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- Semiconductors, 1997, v. 31, n. 8, p. 777, doi. 10.1134/1.1187247
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- Article
Performance of photoelectron spin polarimeters with continuous and pulsed sources: from storage rings to free electron lasers.
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- Journal of Synchrotron Radiation, 2017, v. 24, n. 1, p. 175, doi. 10.1107/S1600577516017513
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- Article
Mineralogy of insoluble particles in the Vostok Antarctic ice core over the last climatic cycle (150 kyr).
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- Geophysical Research Letters, 1988, v. 15, n. 13, p. 1471, doi. 10.1029/GL015i013p01471
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- Article
Analysis of the wavefront aberrations based on neural networks processing of the interferograms with a conical reference beam.
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- Applied Physics B: Lasers & Optics, 2022, v. 128, n. 3, p. 1, doi. 10.1007/s00340-022-07778-y
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- Article