Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 9, p. 1, doi. 10.1007/s10854-023-10195-2

By:

• Villarreal-Faz, M.;
• Meza-Reyes, P. G.;
• Belio-Manzano, A.;
• Hernández-Gaytán, L. M.;
• Mercado-Ornelas, C. A.;
• Perea-Parrales, F. E.;
• Olvera-Enríquez, J. P.;
• Espinosa-Vega, L. I.;
• Rodríguez, A. G.;
• Yee-Rendón, C. M.;
• Méndez-García, V. H.;
• Cortes-Mestizo, I. E.

Publication type:

Article