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CuInP2S6‐Based Electronic/Optoelectronic Synapse for Artificial Visual System Application.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 1, p. 1, doi. 10.1002/adfm.202306945
By:
- Liu, Yiqun;
- Wu, Yonghuang;
- Han, Haojie;
- Wang, Yue;
- Peng, Ruixuan;
- Liu, Kai;
- Yi, Di;
- Nan, Ce‐Wen;
- Ma, Jing
Publication type:
Article
Reconfigurable Carbon Nanotube Barristor.
Published in:
Advanced Functional Materials, 2022, v. 32, n. 11, p. 1, doi. 10.1002/adfm.202107454
By:
- Lu, Gaotian;
- Wei, Yang;
- Li, Xuanzhang;
- Peng, Ruixuan;
- Zhang, Guangqi;
- Mei, Zhen;
- Liang, Liang;
- Liu, Kai;
- Li, Qunqing;
- Fan, Shoushan;
- Zhang, Yuegang
Publication type:
Article
High‐Performance 2D Ambipolar MoTe2 Lateral Memristors by Mild Oxidation.
Published in:
Small, 2024, v. 20, n. 43, p. 1, doi. 10.1002/smll.202402727
By:
- Zhao, Bochen;
- Xu, Longlong;
- Peng, Ruixuan;
- Xin, Zeqin;
- Shi, Run;
- Wu, Yonghuang;
- Wang, Bolun;
- Chen, Jiayuan;
- Pan, Ting;
- Liu, Kai
Publication type:
Article
Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS2 (Small 23/2023).
Published in:
Small, 2023, v. 19, n. 23, p. 1, doi. 10.1002/smll.202300766
By:
- Guo, Jing;
- Peng, Ruixuan;
- Zhang, Xiaolong;
- Xin, Zeqin;
- Wang, Enze;
- Wu, Yonghuang;
- Li, Chenyu;
- Fan, Shoushan;
- Shi, Run;
- Liu, Kai
Publication type:
Article
Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS2.
Published in:
Small, 2023, v. 19, n. 23, p. 1, doi. 10.1002/smll.202300766
By:
- Guo, Jing;
- Peng, Ruixuan;
- Zhang, Xiaolong;
- Xin, Zeqin;
- Wang, Enze;
- Wu, Yonghuang;
- Li, Chenyu;
- Fan, Shoushan;
- Shi, Run;
- Liu, Kai
Publication type:
Article
Liquid Precursor‐Guided Phase Engineering of Single‐Crystal VO2 Beams.
Published in:
Angewandte Chemie, 2023, v. 135, n. 16, p. 1, doi. 10.1002/ange.202301421
By:
- Shi, Run;
- Wu, Yonghuang;
- Xin, Zeqin;
- Guo, Jing;
- Li, Zonglin;
- Zhao, Bochen;
- Peng, Ruixuan;
- Li, Chenyu;
- Wang, Enze;
- Wang, Bolun;
- Zhang, Xiaolong;
- Cheng, Chun;
- Liu, Kai
Publication type:
Article
Liquid Precursor‐Guided Phase Engineering of Single‐Crystal VO2 Beams.
Published in:
Angewandte Chemie International Edition, 2023, v. 62, n. 16, p. 1, doi. 10.1002/anie.202301421
By:
- Shi, Run;
- Wu, Yonghuang;
- Xin, Zeqin;
- Guo, Jing;
- Li, Zonglin;
- Zhao, Bochen;
- Peng, Ruixuan;
- Li, Chenyu;
- Wang, Enze;
- Wang, Bolun;
- Zhang, Xiaolong;
- Cheng, Chun;
- Liu, Kai
Publication type:
Article
All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors (Adv. Mater. 18/2023).
Published in:
Advanced Materials, 2023, v. 35, n. 18, p. 1, doi. 10.1002/adma.202210735
By:
- Wu, Yonghuang;
- Xin, Zeqin;
- Zhang, Zhibin;
- Wang, Bolun;
- Peng, Ruixuan;
- Wang, Enze;
- Shi, Run;
- Liu, Yiqun;
- Guo, Jing;
- Liu, Kaihui;
- Liu, Kai
Publication type:
Article
All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors.
Published in:
Advanced Materials, 2023, v. 35, n. 18, p. 1, doi. 10.1002/adma.202210735
By:
- Wu, Yonghuang;
- Xin, Zeqin;
- Zhang, Zhibin;
- Wang, Bolun;
- Peng, Ruixuan;
- Wang, Enze;
- Shi, Run;
- Liu, Yiqun;
- Guo, Jing;
- Liu, Kaihui;
- Liu, Kai
Publication type:
Article

Found: 9

CuInP<sub>2</sub>S<sub>6</sub>‐Based Electronic/Optoelectronic Synapse for Artificial Visual System Application.

Reconfigurable Carbon Nanotube Barristor.

High‐Performance 2D Ambipolar MoTe<sub>2</sub> Lateral Memristors by Mild Oxidation.

Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS<sub>2</sub> (Small 23/2023).

Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS<sub>2</sub>.

Liquid Precursor‐Guided Phase Engineering of Single‐Crystal VO<sub>2</sub> Beams.

Liquid Precursor‐Guided Phase Engineering of Single‐Crystal VO<sub>2</sub> Beams.

All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS<sub>2</sub> Field‐Effect Transistors (Adv. Mater. 18/2023).

All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS<sub>2</sub> Field‐Effect Transistors.