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Highly Enhanced Polarization Switching Speed in HfO<sub>2</sub>‐based Ferroelectric Thin Films via a Composition Gradient Strategy.
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- Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202301746
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- Article
Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor.
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- Advanced Functional Materials, 2021, v. 31, n. 17, p. 1, doi. 10.1002/adfm.202011077
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- Article
Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer.
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- Journal of Materials Science, 2022, v. 57, n. 41, p. 19371, doi. 10.1007/s10853-022-07835-z
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- Article
Effects of thickness scaling on the dielectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> ferroelectric thin films.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 13, p. 1, doi. 10.1007/s10854-023-10497-5
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Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2049, doi. 10.1007/s10854-019-02724-9
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- Article
Structural and ferroelectric properties of Pr doped HfO<sub>2</sub> thin films fabricated by chemical solution method.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 6, p. 5771, doi. 10.1007/s10854-019-00874-4
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Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process.
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- Materials (1996-1944), 2018, v. 11, n. 12, p. 2418, doi. 10.3390/ma11122418
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- Article