Found: 4
Select item for more details and to access through your institution.
Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen.
- Published in:
- Plasma Chemistry & Plasma Processing, 2018, v. 38, n. 2, p. 415, doi. 10.1007/s11090-017-9870-2
- By:
- Publication type:
- Article
Processes in afterglow responsible for initiation of electrical breakdown in xenon at low pressure.
- Published in:
- Journal of Plasma Physics, 2013, v. 79, n. 5, p. 641, doi. 10.1017/S0022377813000238
- By:
- Publication type:
- Article
Response of pMOS dosemeters on gamma-ray irradiation during its re-use.
- Published in:
- Radiation Protection Dosimetry, 2013, v. 155, n. 4, p. 394, doi. 10.1093/rpd/nct026
- By:
- Publication type:
- Article
Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(<sup>4</sup>S) atoms.
- Published in:
- Contributions to Plasma Physics, 2011, v. 51, n. 9, p. 877, doi. 10.1002/ctpp.201000117
- By:
- Publication type:
- Article