Works matching AU Pearton, S.

Results: 60

Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S012915641940007X

By:

Mastro, M. A.;
Hite, J. K.;
Eddy, C. R.;
Tadjer, M. J.;
Pearton, S. J.;
Ren, F.;
Kim, J.

Publication type:

Article

Energy Levels of Some Rare-Earth Related Impurities in Germanium.

Published in:

Physica Status Solidi (B), 1982, v. 109, n. 2, p. K135, doi. 10.1002/pssb.2221090254

By:

Pearton, S. J.

Publication type:

Article

Magnetic Field Dependence of Defect State in GaAs.

Published in:

Physica Status Solidi (B), 1981, v. 105, n. 1, p. K19, doi. 10.1002/pssb.2221050158

By:

Pearton, S. J.

Publication type:

Article

GaN Electronics.

Published in:

Advanced Materials, 2000, v. 12, n. 21, p. 1571, doi. 10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T

By:

Pearton, S. J.;
Ren, F.

Publication type:

Article

Hydrogenated Amorphous Silicon, by R. A. Street, Cambridge University Press, Cambridge 1991, XIV, 417 pp., hardcover, £ 65.00; ISBN 0-521-37156-2.

Published in:

Advanced Materials, 1992, v. 4, n. 4, p. 306, doi. 10.1002/adma.19920040419

By:

Pearton, S. J.

Publication type:

Article

Spin Dynamics in ZnO-Based Materials.

Published in:

Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 161, doi. 10.1007/s10948-009-0551-0

By:

Buyanova, I. A.;
Murayama, A.;
Furuta, T.;
Oka, Y.;
Norton, D. P.;
Pearton, S. J.;
Osinsky, A.;
Dong, J. W.;
Tu, C. W.;
Chen, W. M.

Publication type:

Article

Hydrogen Sensing Using Pd-Functionalized Multi-Layer Graphene Nanoribbon Networks.

Published in:

Advanced Materials, 2010, v. 22, n. 43, p. 4877, doi. 10.1002/adma.201001798

By:

Johnson, Jason L.;
Behnam, Ashkan;
Pearton, S. J.;
Ural, Ant

Publication type:

Article

Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition.

Published in:

Journal of Materials Science, 2008, v. 43, n. 21, p. 6925, doi. 10.1007/s10853-008-2988-0

By:

Tien, L.;
Pearton, S.;
Norton, D.;
Ren, F.

Publication type:

Article

Impact of neutron irradiation on electronic carrier transport properties in Ga2O3 and comparison with proton irradiation effects.

Published in:

Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2023, v. 178, n. 5/6, p. 680, doi. 10.1080/10420150.2023.2175677

By:

Lee, Jonathan;
Silverman, Andrew C.;
Flitsiyan, Elena;
Xian, Minghan;
Ren, Fan;
Pearton, S. J.

Publication type:

Article

Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 2, p. 251, doi. 10.1007/s00339-008-4426-1

By:

Kim, H. S.;
Erie, J.-M.;
Pearton, S. J.;
Norton, D. P.;
Ren, F.

Publication type:

Article

Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 2, p. 255, doi. 10.1007/s00339-008-4427-0

By:

Kim, H. S.;
Pearton, S. J.;
Norton, D. P.;
Ren, F.

Publication type:

Article

Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 91, n. 1, p. 29, doi. 10.1007/s00339-007-4378-x

By:

Tien, L. C.;
Pearton, S. J.;
Norton, D. P.;
Ren, F.

Publication type:

Article

Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 6, p. 1117, doi. 10.1007/s00339-005-3310-5

By:

Wang, H. T.;
Kang, B. S.;
Ren, F.;
Tien, L. C.;
Sadik, P. W.;
Norton, D. P.;
Pearton, S. J.;
Lin, J.

Publication type:

Article

Detection of CO using bulk ZnO Schottky rectifiers.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 2, p. 259, doi. 10.1007/s00339-004-2666-2

By:

Kang, B. S.;
Kim, S.;
Ren, F.;
Ip, K.;
Heo, Y. W.;
Gila, B. P.;
Abernathy, C. R.;
Norton, D. P.;
Pearton, S. J.

Publication type:

Article

Advanced Processing of GaN for Electronic Devices.

Published in:

Critical Reviews in Solid State & Materials Science, 2000, v. 25, n. 4, p. 279, doi. 10.1080/10408430091149187

By:

Cao, X. A.;
Pearton, S. J.;
Ren, F.

Publication type:

Article

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System.

Published in:

Critical Reviews in Solid State & Materials Science, 1998, v. 23, n. 4, p. 323, doi. 10.1080/10408439891324202

By:

Hong, J.;
Lambers, E. S.;
Abernathy, C. R.;
Pearton, S. J.;
Shul, R. J.;
Hobson, W. S.

Publication type:

Article

REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL-DOPED GaN AND ZnO.

Published in:

Chemical Engineering Communications, 2009, v. 196, n. 9, p. 1030, doi. 10.1080/00986440902896956

By:

Davies, RyanP.;
Abernathy, C. R.;
Pearton, S. J.;
Norton, D. P.;
Ivill, M. P.;
Ren, F.

Publication type:

Article

Radiation Effects in GaN-Based High Electron Mobility Transistors.

Published in:

JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2015, v. 67, n. 7, p. 1601, doi. 10.1007/s11837-015-1359-y

By:

Pearton, S.;
Hwang, Ya-Shi;
Ren, F.

Publication type:

Article

The effects of hydrogenation on the properties of heavy ion irradiated β-Ga2O3.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 15, p. 1, doi. 10.1007/s10854-023-10628-y

By:

Polyakov, A. Y.;
Kuznetsov, A.;
Azarov, A.;
Miakonkikh, A. V.;
Chernykh, A. V.;
Vasilev, A. A.;
Shchemerov, I. V.;
Kochkova, A. I.;
Matros, N. R.;
Pearton, S. J.

Publication type:

Article

Electron irradiation of near-UV GaN/InGaN light emitting diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372

By:

Lee, In‐Hwan;
Polyakov, Alexander Y.;
Smirnov, N. B.;
Shchemerov, I. V.;
Shmidt, N. M.;
Tal'nishnih, N. A.;
Shabunina, E. I.;
Cho, Han‐Su;
Hwang, Sung‐Min;
Zinovyev, R. A.;
Didenko, S. I.;
Lagov, P. B.;
Pearton, S. J.

Publication type:

Article

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride.

Published in:

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 4, p. 380, doi. 10.1134/S1027451007040039

By:

Govorkov, A.;
Polyakov, A.;
Yugova, T.;
Smirnov, N.;
Petrova, E.;
Mezhennyi, M.;
Markov, A.;
Lee, I.;
Pearton, S.

Publication type:

Article

Persistent photoconductivity in MgZnO alloys.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 577, doi. 10.1134/S1063782609050054

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Kim, H. S.;
Norton, D. P.;
Pearton, S. J.;
Belogorokhov, A. I.

Publication type:

Article

Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1568, doi. 10.1007/s11664-018-06885-x

By:

Fares, Chaker;
Ren, F.;
Lambers, Eric;
Hays, David C.;
Gila, B. P.;
Pearton, S. J.

Publication type:

Article

Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 5, p. 601, doi. 10.1007/s11664-009-0973-2

By:

Polyakov, A.;
Smirnov, N.;
Govorkov, A.;
Kozhukhova, E.;
Belogorokhov, A.;
Norton, D.;
Kim, H.;
Pearton, S.

Publication type:

Article

Growth and Characterization of GaN Nanowires for Hydrogen Sensors.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 490, doi. 10.1007/s11664-008-0596-z

By:

Johnson, Jason L.;
Yongho Choi;
Ural, Ant;
Lim, Wantae;
Wright, J. S.;
Gila, B. P.;
Ren, F.;
Pearton, S. J.

Publication type:

Article

ZnO and Related Materials for Sensors and Light-Emitting Diodes.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1426, doi. 10.1007/s11664-008-0416-5

By:

PEARTON, S. J.;
LIM, W. T.;
WRIGHT, J. S.;
TIEN, L. C.;
KIM, H. S.;
NORTON, D. P.;
WANG, H. T.;
KANG, B. S.;
REN, F.;
JUN, J.;
LIN, J.;
OSINSKY, A.

Publication type:

Article

Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 5, p. 550, doi. 10.1007/s11664-007-0298-y

By:

Kang, B. S.;
Wang, H. T.;
Ren, F.;
Hlad, M.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Li, C.;
Low, Z. N.;
Lin, J.;
Johnson, J. W.;
Rajagopal, P.;
Roberts, J. C.;
Piner, E. L.;
Linthicum, K. J.

Publication type:

Article

Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 4, p. 384, doi. 10.1007/s11664-007-0326-y

By:

Anderson, T. J.;
Ren, F.;
Kim, J.;
Lin, J.;
Hlad, M.;
Gila, B. P.;
Voss, L.;
Pearton, S. J.;
Bove, P.;
Lahreche, H.;
Thuret, J.

Publication type:

Article

Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2.

Published in:

Journal of Electronic Materials, 2008, v. 37, n. 2, p. 161, doi. 10.1007/s11664-007-0334-y

By:

Lim, W. T.;
Sadik, P. W.;
Norton, D. P.;
Gila, B. P.;
Pearton, S. J.;
Kravchenko, I. I.;
Ren, F.

Publication type:

Article

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3

By:

Voss, L. F.;
Stafford, L.;
Khanna, R.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Kravchenko, I. I.

Publication type:

Article

Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 10, p. 1320, doi. 10.1007/s11664-007-0203-8

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Markov, A. V.;
Yakimov, E. B.;
Vergeles, P. S.;
Kolin, N. G.;
Merkurisov, D. I.;
Boiko, V. M.;
In-Hwan Lee;
Cheul-Ro Lee;
S. J. Pearton

Publication type:

Article

Annealing and Measurement Temperature Dependence of W2B- and W2B2-Based Rectifying Contacts to p-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 384, doi. 10.1007/s11664-006-0054-8

By:

Voss, L. F.;
Stafford, L.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Chen, J.-J.;
Ren, F.

Publication type:

Article

Effect of Si Co Doping on Ferromagnetic Properties of GaGdN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 391, doi. 10.1007/s11664-006-0040-1

By:

Hite, J. K.;
Frazier, R. M.;
Davies, R. P.;
Thaler, G. T.;
Abernathy, C. R.;
Pearton, S. J.;
Zavada, J. M.;
Brown, E.;
Hömmerich, U.

Publication type:

Article

Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 488, doi. 10.1007/s11664-006-0039-7

By:

Wright, J. S.;
Stafford, L.;
Gila, B. P.;
Norton, D. P.;
Pearton, S. J.;
Hung-Ta Wang;
Ren, F.

Publication type:

Article

Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 368, doi. 10.1007/s11664-006-0037-9

By:

Chen, J.-J.;
Hlad, M.;
Gerger, A. P.;
Gila, B. P.;
Ren, F.;
Abernathy, C. R.;
Pearton, S. J.

Publication type:

Article

Improved Long-Term Thermal Stability At 350°C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 379, doi. 10.1007/s11664-006-0036-x

By:

Khanna, Rohit;
Stafford, L.;
Pearton, S. J.;
Anderson, T. J.;
Ren, F.;
Kravchenko, I. I.;
Dabiran, Amir;
Osinsky, A.;
Joon Yeob Lee;
Kwan-Young Lee;
Jihyun Kim

Publication type:

Article

Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 519, doi. 10.1007/s11664-006-0035-y

By:

Allums, K. K.;
Hlad, M.;
Gerger, A. P.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Dwivedi, R.;
Fogarty, T. N.;
Wilkins, R.

Publication type:

Article

Ferromagnetism in Transition-Metal Doped ZnO.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 462, doi. 10.1007/s11664-006-0034-z

By:

Pearton, S. J.;
Norton, D. P.;
Ivill, M. P.;
Hebard, A. F.;
Zavada, J. M.;
Chen, W. M.;
Buyanova, I. A.

Publication type:

Article

ZnO Spintronics and Nanowire Devices.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 5, p. 862, doi. 10.1007/BF02692541

By:

Pearton, S. J.;
Norton, D. P.;
Heo, Y. W.;
Tien, L. C.;
Ivill, M. P.;
Li, Y.;
Kang, B. S.;
Ren, F.;
Kelly, J.;
Hebard, A. F.

Publication type:

Article

Electrical Transport Properties of Single GaN and InN Nanowires.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 738, doi. 10.1007/s11664-006-0131-z

By:

Chih-Yang Chang;
Gou-Chung Chi;
Wei-Ming Wang;
Li-Chyong Chen;
Kuei-Hsien Chen;
Ren, F.;
Pearton, S. J.

Publication type:

Article

Si-Diffused GaN for Enhancement-Mode GaN MOSFET on Si Applications.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 685, doi. 10.1007/s11664-006-0121-1

By:

Soohwan Jang;
Ren, F.;
Pearton, S. J.;
Gila, B. P.;
Hlad, M.;
Abernathy, C. R.;
Hyucksoo Yang;
Pan, C. J.;
Jenn-Inn Chyi;
Bove, P.;
Lahreche, H.;
Thuret, J.

Publication type:

Article

Selective Dry Etching of (Sc2O3)x(Ga2O3)1-x Gate Dielectrics and Surface Passivation Films on GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 680, doi. 10.1007/s11664-006-0120-2

By:

Hlad, M.;
Voss, L.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.

Publication type:

Article

Comparison of Laser-Wavelength Operation for Drilling of Via Holes in AlGaN/GaN HEMTs on SiC Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 675, doi. 10.1007/s11664-006-0119-8

By:

Anderson, T. J.;
Ren, F.;
Covert, L.;
Lin, J.;
Pearton, S. J.;
Dalrymple, T. W.;
Bozada, C.;
Fitch, R. C.;
Moser, N.;
Bedford, R. G.;
Schimpf, M.

Publication type:

Article

Electrical Properties of Undoped Bulk ZnO Substrates.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 663, doi. 10.1007/s11664-006-0117-x

By:

Polyakov, A. Y.;
Smirnov, N. B.;
Govorkov, A. V.;
Kozhukhova, E. A.;
Pearton, S. J.;
Norton, D. P.;
Osinsky, A.;
Dabiran, Amir

Publication type:

Article

Annealing Temperature Dependence of TiB2 Schottky Barrier Contacts on n-GaN.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 658, doi. 10.1007/s11664-006-0116-y

By:

Khanna, Rohit;
Pearton, S. J.;
Ren, F.;
Kravchenko, I.

Publication type:

Article

Synthesis and Characterization of Phosphorus-Doped ZnO and (Zn,Mg)O Thin Films via Pulsed Laser Deposition.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 530, doi. 10.1007/s11664-006-0095-z

By:

Li, Y. J.;
Heo, Y. W.;
Erie, J. M.;
Kim, H.;
Ip, K.;
Pearton, S. J.;
Norton, D. P.

Publication type:

Article

Selective and Nonselective Wet Etching of Zn0.9Mg0.1O/ZnO.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 516, doi. 10.1007/s11664-006-0092-2

By:

Jau-Jiun Chen;
Soohwan Jang;
Ren, F.;
Yuanjie Li;
Hyun-Sik Kim;
Norton, D. P.;
Pearton, S. J.;
Osinsky, A.;
Chu, S. N . G.;
Weaver, J. F.

Publication type:

Article

Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 416, doi. 10.1007/s11664-005-0121-6

By:

Dong, J. W.;
Osinsky, A.;
Hertog, B.;
Dabiran, A. M.;
Chow, P. P.;
Heo, Y. W.;
Norton, D. P.;
Pearton, S. J.

Publication type:

Article

Properties of Phosphorus-Doped (Zn,Mg)O Thin Films and Device Structures.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 409, doi. 10.1007/s11664-005-0120-7

By:

Heo, Y. W.;
Kwon, Y. W.;
Li, Y.;
Pearton, S. J.;
Norton, D. P.

Publication type:

Article

Proton Irradiation of ZnO Schottky Diodes.

Published in:

Journal of Electronic Materials, 2005, v. 34, n. 4, p. 395, doi. 10.1007/s11664-005-0117-2

By:

Khanna, Rohit;
Ip, K.;
Allums, K. K.;
Baik, K.;
Abernathy, C. R.;
Pearton, S. J.;
Heo, Y. W.;
Norton, D. P.;
Ren, F.;
Shojah-Ardalan, S.;
Wilkins, R.

Publication type:

Article