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Identification of inorganic and organic inclusions in the subglacial antarctic Lake Vostok ice with Raman spectroscopy.
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- Journal of Raman Spectroscopy, 2017, v. 48, n. 11, p. 1503, doi. 10.1002/jrs.5142
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- Article
Laser alteration on iron sulfides under various environmental conditions.
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- Journal of Raman Spectroscopy, 2017, v. 48, n. 11, p. 1509, doi. 10.1002/jrs.5083
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- Article
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in Germanium.
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- JETP Letters, 2019, v. 110, n. 10, p. 677, doi. 10.1134/S0021364019220144
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- Article
Far Infrared Emission and Absorption (Amplification) under Real Space Transfer and Population Inversion in Shallow Multi-Quantum-Wells.
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- Physica Status Solidi (B), 1997, v. 204, n. 1, p. 563, doi. 10.1002/1521-3951(199711)204:1<563::AID-PSSB563>3.0.CO;2-N
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Far-Infrared Hole Absorption in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs MQW Heterostructures with δ-Doped Barriers.
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- Physica Status Solidi (B), 1997, v. 204, n. 1, p. 174, doi. 10.1002/1521-3951(199711)204:1<174::AID-PSSB174>3.0.CO;2-V
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- Article
Electrostatic model of water vapor condensation.
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- Doklady Physics, 2008, v. 53, n. 6, p. 310, doi. 10.1134/S1028335808060062
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- Article
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors.
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- Semiconductors, 2005, v. 39, n. 1, p. 67, doi. 10.1134/1.1852648
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- Article
Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium.
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- Physica Status Solidi (B), 2017, v. 254, n. 6, p. n/a, doi. 10.1002/pssb.201600803
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- Article
The physical principles of terahertz silicon lasers based on intracenter transitions.
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- Physica Status Solidi (B), 2013, v. 250, n. 1, p. 9, doi. 10.1002/pssb.201248322
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Front Cover: The physical principles of terahertz silicon lasers based on intracenter transitions (Phys. Status Solidi B 1/2013).
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- Physica Status Solidi (B), 2013, v. 250, n. 1, p. n/a, doi. 10.1002/pssb.201390000
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- Article
Optically pumped terahertz semiconductor bulk lasers.
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- Physica Status Solidi (B), 2003, v. 235, n. 1, p. 126, doi. 10.1002/pssb.200301532
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- Article
Relaxation of the Excited States of Arsenic in Strained Germanium.
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- Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188
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- Article
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi.
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- Semiconductors, 2020, v. 54, n. 8, p. 969, doi. 10.1134/S1063782620080278
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- Article
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.
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- Semiconductors, 2019, v. 53, n. 9, p. 1255, doi. 10.1134/S1063782619090288
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- Article
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.
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- Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197
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- Article