Found: 6
Select item for more details and to access through your institution.
Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 11, p. 1079, doi. 10.1134/S1063785016110031
- By:
- Publication type:
- Article
Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 11, p. 1061, doi. 10.1134/S1063785016110110
- By:
- Publication type:
- Article
The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 7, p. 701, doi. 10.1134/S1063785016070075
- By:
- Publication type:
- Article
Normally off transistors based on in situ passivated AlN/GaN heterostructures.
- Published in:
- Technical Physics Letters, 2016, v. 42, n. 7, p. 750, doi. 10.1134/S1063785016070312
- By:
- Publication type:
- Article
AlN/GaN heterostructures for normally-off transistors.
- Published in:
- Semiconductors, 2017, v. 51, n. 3, p. 379, doi. 10.1134/S1063782617030277
- By:
- Publication type:
- Article
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.
- Published in:
- Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263
- By:
- Publication type:
- Article