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Studying the Pyroelectric Effect in AlN Epilayers.
- Published in:
- Technical Physics Letters, 2018, v. 44, n. 8, p. 709, doi. 10.1134/S1063785018080199
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- Article
Generating broadband random Gaussian signals.
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- Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X
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- Article
High-temperature gallium phosphide dynistors.
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- Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077
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- Article
Diffusion redistribution of zinc during the doping of structurally inhomogeneous epitaxial layers of gallium phosphide.
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- Technical Physics Letters, 2009, v. 35, n. 7, p. 601, doi. 10.1134/S1063785009070050
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- Article
Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices.
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- Technical Physics Letters, 2008, v. 34, n. 10, p. 898, doi. 10.1134/S106378500810026X
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- Article
Biplanar Epitaxial AlN/SiC/(n, p)SiC Structures for High-Temperature Functional Electronic Devices.
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- Technical Physics, 2020, v. 65, n. 3, p. 428, doi. 10.1134/S1063784220030184
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- Article
Specific Features of the Pyroelectric Effect in Epitaxial Aluminum Nitride Layers Obtained on Si Substrates.
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- Technical Physics Letters, 2020, v. 46, n. 1, p. 16, doi. 10.1134/S1063785020010058
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- Article