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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra.
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- Technical Physics Letters, 2024, v. 50, n. 2, p. 171, doi. 10.1134/S1063785023180013
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- Article
Polyimide Membranes Formed on a Metal Grid Matrix by the Langmuir–Blodgett Method.
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- Technical Physics Letters, 2005, v. 31, n. 4, p. 341, doi. 10.1134/1.1920391
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- Article
Determination of Silicon Carbide Structures Layer Thicknesses using Reflection Spectra Frequency Analysis.
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- Technical Physics, 2021, v. 66, n. 6, p. 779, doi. 10.1134/S1063784221050182
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- Article
Nondestructive Control of the Surface, Layers, and Charge Carrier Concentration on SiC Substrates and Structures.
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- Technical Physics, 2019, v. 64, n. 12, p. 1774, doi. 10.1134/S1063784219120181
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- Article
Surface Functionality Features of Porous Silicon Prepared and Treated in Different Conditions.
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- Journal of Nanomaterials, 2016, p. 1, doi. 10.1155/2016/2629582
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- Article
Study of the supramolecular structure formation of comb-like polyimide precursor Langmuir-Blodgett films.
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- Crystallography Reports, 2009, v. 54, n. 3, p. 468, doi. 10.1134/S106377450903016X
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- Article
Modification of the glass surface by titanium dioxide films synthesized through the sol-gel method.
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- Glass Physics & Chemistry, 2011, v. 37, n. 2, p. 150, doi. 10.1134/S1087659611020143
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- Article
Excitonic effects in the photoconductivity of quantum-well Ga[sub x]In[sub 1-x] As/InP structures.
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- Semiconductors, 1997, v. 31, n. 7, p. 719, doi. 10.1134/1.1187273
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- Article
Comparative Ellipsometric Analysis of Silicon Carbide Polytypes 4H, 15R, and 6H Produced by a Modified Lely Method in the Same Growth Process.
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- Technical Physics Letters, 2020, v. 46, n. 10, p. 968, doi. 10.1134/S1063785020100028
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- Article
Investigation of the Hardness and Young's Modulus in Thin Near-Surface Layers of Silicon Carbide from the Si- and C-Faces by Nanoindentation.
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- Technical Physics Letters, 2020, v. 46, n. 8, p. 763, doi. 10.1134/S106378502008012X
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- Article
Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures.
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- Semiconductors, 2022, v. 56, n. 13, p. 455, doi. 10.1134/S1063782622130073
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- Article