Works by POLYAKOV, N. K.

Results: 27

POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319

By:

FÜRST, J.;
PASCHER, H.;
SHALYGIN, V. A.;
VOROBJEV, L. E.;
FIRSOV, D. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
USTINOV, V. M.

Publication type:

Article

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X

By:

FIRSOV, D. A.;
VOROBJEV, L. E.;
BARZILOVICH, M. A.;
YU. PANEVIN, V.;
MIKHAYLOV, I. V.;
FEDOSOV, N. K.;
SHALYGIN, V. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
ZHUKOV, A. E.;
PIKHTIN, N. A.;
TARASOV, I. S.;
USTINOV, V. M.;
JULIEN, F. H.;
SEKOWSKI, M.;
HANNA, S.;
SEILMEIER, A.

Publication type:

Article

The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3–1.4μm.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1316, doi. 10.1134/1.1325430

By:

Volovik, B. V.;
Sizov, D. S.;
Tsatsul’nikov, A. F.;
Musikhin, Yu. G.;
Ledentsov, N. N.;
Ustinov, V. M.;
Egorov, V. A.;
Petrov, V. N.;
Polyakov, N. K.;
Tsyrlin, G. É.

Publication type:

Article

Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079

By:

Petrov, V. N.;
Polyakov, N. K.;
Egorov, V. A.;
Cirlin, G. E.;
Zakharov, N. D.;
Werner, P.;
Ustinov, V. M.;
Denisov, D. V.;
Ledentsov, N. N.;
Alferov, Zh. I.

Publication type:

Article

Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic.

Published in:

Semiconductors, 1999, v. 33, n. 10, p. 1054, doi. 10.1134/1.1187863

By:

Tsirlin, G. É.;
Petrov, V. N.;
Polyakov, N. K.;
Masalov, S. A.;
Golubok, A. O.;
Denisov, D. V.;
Kudryavtsev, Yu. A.;
Ber, B. Ya.;
Ustinov, V. M.

Publication type:

Article

Heteroepitaxial growth of InAs on Si: a new type of quantum dot.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815

By:

Cyrlin, G. E.;
Petrov, V. N.;
Dubrovskii, V. G.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Golubok, A. O.;
Masalov, S. A.;
Komyak, N. I.;
Ustinov, V. M.;
Egorov, A. Yu.;
Kovsh, A. R.;
Maximov, M. V.;
Tsatsul’nikov, A. F.;
Volovik, B. V.;
Zhukov, A. E.;
Kop’ev, P. S.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.

Published in:

Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025

By:

Tsyrlin, G. É.;
Korneeva, N. P.;
Demidov, V. N.;
Polyakov, N. K.;
Petrov, V. N.;
Ledentsov, N. N.

Publication type:

Article

Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 768, doi. 10.1134/1.1187245

By:

Tsyrlin, G. É.;
Petrov, V. N.;
Dubrovskiı, V. G.;
Polyakov, N. K.;
Tipisev, S. Ya.;
Golubok, A. O.;
Ledentsov, N. N.

Publication type:

Article

High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source.

Published in:

Technical Physics Letters, 2021, v. 47, n. 10, p. 757, doi. 10.1134/S1063785021080071

By:

Goray, L. I.;
Pirogov, E. V.;
Svechnikov, M. V.;
Sobolev, M. S.;
Polyakov, N. K.;
Gerchikov, L. G.;
Nikitina, E. V.;
Dashkov, A. S.;
Borisov, M. M.;
Yakunin, S. N.;
Bouravleuv, A. D.

Publication type:

Article

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 919, doi. 10.1134/S1063782610070158

By:

Egorov, A. Yu.;
Gladyshev, A. G.;
Nikitina, E. V.;
Denisov, D. V.;
Polyakov, N. K.;
Pirogov, E. V.;
Gorbazevich, A. A.

Publication type:

Article

Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.

Published in:

Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130

By:

Samsonenko, Yu. B.;
Cirlin, G. É;
Egorov, V. A;
Polyakov, N. K.;
Ulin, V. P.;
Dubrovskii, V. G.

Publication type:

Article

The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 587, doi. 10.1134/S1063782606050137

By:

Tonkikh, A. A.;
Cirlin, G. E.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.;
Talalaev, V. G.;
Novikov, B. V.

Publication type:

Article

The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates.

Published in:

Semiconductors, 2005, v. 39, n. 9, p. 1053, doi. 10.1134/1.2042598

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.

Publication type:

Article

The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55μm.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 703, doi. 10.1134/1.1944862

By:

Kryzhanovskaya, N. V.;
Egorov, A. Yu.;
Mamutin, V. V.;
Polyakov, N. K.;
Tsatsul’nikov, A. F.;
Kovsh, A. R.;
Ledentsov, N. N.;
Ustinov, V. M.;
Bimberg, D.

Publication type:

Article

Localization of Holes in an InAs/GaAs Quantum-Dot Molecule.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 119, doi. 10.1134/1.1852659

By:

Sobolev, M. M.;
Cirlin, G. E.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Tonkikh, A. A.;
Musikhin, Yu. G.

Publication type:

Article

The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660

By:

Samsonenko, Yu. B.;
Cirlin, G. E.;
Tonkikh, A. A.;
Polyakov, N. K.;
Kryzhanovskaya, N. V.;
Ustinov, V. M.;
Vorob'ev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Zakharov, N. D.;
Werner, P.;
Andreev, A.

Publication type:

Article

Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate.

Published in:

Semiconductors, 2004, v. 38, n. 3, p. 329, doi. 10.1134/1.1682338

By:

Dubrovski&icaron;, V. G.;
Musikhin, Yu. G.;
Cirlin, G. É.;
Egorov, V. A.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Tonkikh, A. A.;
Kryzhanovskaya, N. V.;
Bert, N. A.;
Ustinov, V. M.

Publication type:

Article

Room-Temperature 1.5–1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature.

Published in:

Semiconductors, 2003, v. 37, n. 12, p. 1406, doi. 10.1134/1.1634662

By:

Tonkikh, A. A.;
Tsyrlin, G. E.;
Talalaev, V. G.;
Novikov, B. V.;
Egorov, V. A.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Ustinov, V. M.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System.

Published in:

Semiconductors, 2003, v. 37, n. 7, p. 855, doi. 10.1134/1.1592864

By:

Dubrovskiı, V. G.;
Egorov, V. A.;
Cirlin, G. E.;
Polyakov, N. K.;
Samsonenko, Yu. B.;
Kryzhanovskaya, N. V.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.

Publication type:

Article

Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 559, doi. 10.1134/1.1575361

By:

Sizov, D. S.;
Samsonenko, Yu. B.;
Tsyrlin, G. E.;
Polyakov, N. K.;
Egorov, V. A.;
Tonkikh, A. A.;
Zhukov, A. E.;
Mikhrin, S. S.;
Vasil’ev, A. P.;
Musikhin, Yu. G.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.;
Ledentsov, N. N.

Publication type:

Article

Deep X-Ray Reflectometry of Supermultiperiod A<sub>3</sub>B<sub>5</sub> Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.

Published in:

Technical Physics, 2020, v. 65, n. 11, p. 1822, doi. 10.1134/S1063784220110134

By:

Goray, L. I.;
Pirogov, E. V.;
Sobolev, M. S.;
Polyakov, N. K.;
Dashkov, A. S.;
Svechnikov, M. V.;
Bouravleuv, A. D.

Publication type:

Article

A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns.

Published in:

Technical Physics, 2000, v. 45, n. 5, p. 618, doi. 10.1134/1.1259686

By:

Petrov, V. N.;
Demidov, V. N.;
Korneeva, N. P.;
Polyakov, N. K.;
Tsyrlin, G. É.

Publication type:

Article

Photoluminescence in the 1.55μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells.

Published in:

Technical Physics Letters, 2002, v. 28, n. 5, p. 434, doi. 10.1134/1.1482759

By:

Tonkikh, A. A.;
Egorov, V. A.;
Polyakov, N. K.;
Cirlin, G. E.;
Kryzhanovskaya, N. V.;
Sizov, D. S.;
Ustinov, V. M.

Publication type:

Article

Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures.

Published in:

Technical Physics Letters, 2002, v. 28, n. 3, p. 191, doi. 10.1134/1.1467272

By:

Tonkikh, A. A.;
Egorov, V. A.;
Polyakov, N. K.;
Tsyrlin, G. É.;
Volovik, B. V.;
Cherkashin, N. A.;
Ustinov, V. M.

Publication type:

Article

Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface.

Published in:

Technical Physics Letters, 2000, v. 26, n. 9, p. 781, doi. 10.1134/1.1315492

By:

Tsyrlin, G. É.;
Samsonenko, Yu. B.;
Petrov, V. N.;
Polyakov, N. K.;
Egorov, V. A.;
Masalov, S. A.;
Gorbenko, O. M.;
Golubok, A. O.;
Soshnikov, I. P.;
Ustinov, V. M.

Publication type:

Article

Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3–1.4μm Wavelength Range.

Published in:

Technical Physics Letters, 2000, v. 26, n. 7, p. 631, doi. 10.1134/1.1262937

By:

Egorov, V. A.;
Petrov, V. N.;
Polyakov, N. K.;
Tsyrlin, G. É.;
Volovik, B. V.;
Zhukov, A. E.;
Ustinov, V. M.

Publication type:

Article

Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3μm.

Published in:

Technical Physics Letters, 2000, v. 26, n. 5, p. 423, doi. 10.1134/1.1262866

By:

Tsyrlin, G. É.;
Polyakov, N. K.;
Egorov, V. A.;
Petrov, V. N.;
Volovik, B. V.;
Sizov, D. S.;
Tsatsul’nikov, A. F.;
Ustinov, V. M.

Publication type:

Article