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Interface Properties of MoS 2 van der Waals Heterojunctions with GaN.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 133, doi. 10.3390/nano14020133
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- Article
Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2837, doi. 10.3390/nano13212837
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- Article
On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 10, p. 1, doi. 10.1002/pssb.202300262
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- Article
On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 10, p. 1, doi. 10.1002/pssb.202370030
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- Article
Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS<sub>2</sub> on 4H–SiC by Microscopic Analyses and Ab Initio Calculations.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 10, p. 1, doi. 10.1002/pssr.202300218
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- Article
Reactive Sputter Deposition of Ga 2 O 3 Thin Films Using Liquid Ga Target.
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- Coatings (2079-6412), 2023, v. 13, n. 9, p. 1550, doi. 10.3390/coatings13091550
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- Article
Strain Measurement in Single Crystals by 4D-ED.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 6, p. 1007, doi. 10.3390/nano13061007
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- Article
Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga<sub>2</sub>O<sub>3</sub> Epitaxy and its Impact on the In‐Plane Electronic Conduction.
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- Advanced Functional Materials, 2023, v. 33, n. 2, p. 1, doi. 10.1002/adfm.202207821
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- Article
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS<sub>2</sub> on Ion Implantation Doped 4H‐SiC.
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- Advanced Materials Interfaces, 2023, v. 10, n. 1, p. 1, doi. 10.1002/admi.202201502
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- Article
Encapsulation of the Graphene Nanoribbon Precursor 1,2,4‐Trichlorobenzene in Boron Nitride Nanotubes at Room Temperature.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 1, p. 1, doi. 10.1002/pssr.202200284
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- Article
Nanotechnology for Electronic Materials and Devices.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 19, p. 3319, doi. 10.3390/nano12193319
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- Article
Esaki Diode Behavior in Highly Uniform MoS<sub>2</sub>/Silicon Carbide Heterojunctions.
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- Advanced Materials Interfaces, 2022, v. 9, n. 22, p. 1, doi. 10.1002/admi.202200915
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- Article
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 2, p. 182, doi. 10.3390/nano12020182
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
ZnSnN<sub>2</sub> in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap.
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- Advanced Optical Materials, 2021, v. 9, n. 16, p. 1, doi. 10.1002/adom.202100015
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- Article
ZnSnN<sub>2</sub> in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap.
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- Advanced Optical Materials, 2021, v. 9, n. 16, p. 1, doi. 10.1002/adom.202100015
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- Article
Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 8, p. 1878, doi. 10.3390/nano11081878
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- Article
Indium Nitride at the 2D Limit.
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- Advanced Materials, 2021, v. 33, n. 1, p. 1, doi. 10.1002/adma.202006660
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- Article
Prof. Dr. Bartha László 1931-2019.
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- Bányászati és Kohászati Lapok - Kohászat, 2019, v. 152, n. 5, p. 54
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- Article
Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 1, p. N.PAG, doi. 10.1002/pssa.201800482
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article
A Tool for Local Thickness Determination and Grain Boundary Characterization by CTEM and HRTEM Techniques.
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- Microscopy & Microanalysis, 2015, v. 21, n. 2, p. 422, doi. 10.1017/S1431927615000112
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- Article
Highly transparent ITO thin films on photosensitive glass: sol-gel synthesis, structure, morphology and optical properties.
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- Applied Physics A: Materials Science & Processing, 2012, v. 107, n. 2, p. 385, doi. 10.1007/s00339-012-6765-1
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- Article