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Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-95475-9
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- Article
Control of Mooij correlations at the nanoscale in the disordered metallic Ta–nanoisland FeNi multilayers.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-78185-6
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- Article
Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd<sub>3 –</sub><sub>x</sub>Mn<sub>x</sub>As<sub>2</sub> Films.
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- Semiconductors, 2019, v. 53, n. 11, p. 1439, doi. 10.1134/S1063782619110137
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- Article
Vapor-Phase Synthesis and Magnetoresistance of (Cd<sub>0.993</sub>Zn<sub>0.007</sub>)<sub>3</sub>As<sub>2</sub> Single Crystals.
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- JETP Letters, 2019, v. 109, n. 3, p. 175, doi. 10.1134/S0021364019030019
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- Article
Hopping Conductivity in Poly(p-Xylylene)-Fe Nanocomposites.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 890, doi. 10.1134/S1063785018100152
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- Article
Quantum corrections to the conductivity and anisotropy of the magnetoresistance in Eu-doped BiSe thin films.
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- JETP Letters, 2017, v. 106, n. 8, p. 526, doi. 10.1134/S0021364017200103
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- Article
Quantum corrections to the conductivity and anomalous Hall effect in InGaAs quantum wells with a spatially separated Mn impurity.
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- Semiconductors, 2017, v. 51, n. 10, p. 1313, doi. 10.1134/S1063782617100177
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- Article
Electron Mobilities and Effective Masses in InGaAs/InAlAs HEMT Structures with High In Content.
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- Journal of Low Temperature Physics, 2016, v. 185, n. 5/6, p. 701, doi. 10.1007/s10909-016-1589-6
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Magnetotransport in thin epitaxial BiSe films.
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- JETP Letters, 2016, v. 104, n. 9, p. 629, doi. 10.1134/S0021364016210128
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Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.
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- Scientific Reports, 2015, p. 17158, doi. 10.1038/srep17158
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- Article
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.
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- Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131
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- Article
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.
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- Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165
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- Article
Anomalous hall effect in the InMnSb dilute magnetic semiconductor with MnSb inclusions.
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- JETP Letters, 2015, v. 101, n. 2, p. 130, doi. 10.1134/S0021364015020149
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- Article
Anomalous hall effect in a 2D heterostructure including a GaAs/InGaAs/GaAs quantum well with a remote Mn δ-layer.
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- JETP Letters, 2015, v. 100, n. 9, p. 570, doi. 10.1134/S0021364014210127
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- Article