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Biosensors for the Rapid Detection of Cardiovascular Biomarkers of Vital Interest: Needs, Analysis and Perspectives.
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- Journal of Personalized Medicine, 2022, v. 12, n. 12, p. 1942, doi. 10.3390/jpm12121942
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- Article
Relevant Biomarkers in Medical Practices: An Analysis of the Needs Addressed by an International Survey.
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- Journal of Personalized Medicine, 2022, v. 12, n. 1, p. 106, doi. 10.3390/jpm12010106
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- Article
Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates.
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- Advanced Materials Technologies, 2023, v. 8, n. 18, p. 1, doi. 10.1002/admt.202300600
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- Article
Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template.
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- Advanced Materials Technologies, 2023, v. 8, n. 15, p. 1, doi. 10.1002/admt.202300147
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- Article
Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019).
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- Advanced Materials Technologies, 2019, v. 4, n. 10, p. N.PAG, doi. 10.1002/admt.201970057
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- Article
Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications.
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- Advanced Materials Technologies, 2019, v. 4, n. 10, p. N.PAG, doi. 10.1002/admt.201900164
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- Article
High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells.
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- Progress in Photovoltaics, 2016, v. 24, n. 11, p. 1436, doi. 10.1002/pip.2807
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- Article
A study of BGaN back-barriers for AlGaN/GaN HEMTs.
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- European Physical Journal - Applied Physics, 2012, v. 60, n. 3, p. N.PAG, doi. 10.1051/epjap/2012120265
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- Article
Investigation of the Performance of HEMT-Based NO, NO<sub>2</sub> and NH<sub>3</sub> Exhaust Gas Sensors for Automotive Antipollution Systems.
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- Sensors (14248220), 2016, v. 16, n. 3, p. 273, doi. 10.3390/s16030273
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- Article
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-77681-z
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- Article
Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600868
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- Article
Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600496
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- Article
High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 740, doi. 10.1002/pssa.201400278
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- Article
BAlN thin layers for deep UV applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 745, doi. 10.1002/pssa.201400199
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- Article
Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019).
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- Advanced Materials Interfaces, 2019, v. 6, n. 16, p. N.PAG, doi. 10.1002/admi.201900207
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- Article
Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride.
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- Advanced Materials Interfaces, 2019, v. 6, n. 16, p. N.PAG, doi. 10.1002/admi.201900207
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- Article
Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers.
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- Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 681, doi. 10.1007/s11082-013-9665-5
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- Article
Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN.
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- Materials (1996-1944), 2022, v. 15, n. 23, p. 8602, doi. 10.3390/ma15238602
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- Article
(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2404, doi. 10.3390/nano13172404
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- Article
Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 211, doi. 10.3390/nano11010211
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- Article