Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties.
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- Journal of Electronic Materials, 2020, v. 49, n. 11, p. 6270, doi. 10.1007/s11664-020-08392-4
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Works matching AU Osten, H. J.
Results: 2
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Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324
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