Works by Osiyuk, I. N.
Results: 6
Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.
- Published in:
- Applied Physics B: Lasers & Optics, 2008, v. 91, n. 1, p. 123, doi. 10.1007/s00340-008-2948-z
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- Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
- Published in:
- Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
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- Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
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- Article
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034
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- Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
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- Article
Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
- Published in:
- Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390
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- Article