Works matching AU Orak, Ikram

Results: 21

Synthesis, Structure Characterization, and Quantum Theory Simulations of Polyimide‐Au/PI/p‐Si Polymer‐Based Custom Photodiode.

Published in:

Journal of Applied Polymer Science, 2025, v. 142, n. 20, p. 1, doi. 10.1002/app.56904

By:

Ata, Ahmet Cagri;
Yildiko, Umit;
Tanriverdi, Aslihan Aycan;
Kartal, Baris;
Ebiri, Rustem;
Tekes, Ahmet Turan;
Tasyurek, Lutfi Bilal;
Orak, Ikram;
Cakmak, Ismail

Publication type:

Article

The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 14040, doi. 10.1007/s10854-017-7255-1

By:

Yerişkin, Seçkin;
Balbaşı, Muzaffer;
Orak, İkram

Publication type:

Article

Two‐step novel aromatic polyimide synthesis and characterization: Survey of energy calculations and diode applications.

Published in:

Journal of Applied Polymer Science, 2023, v. 140, n. 14, p. 1, doi. 10.1002/app.53689

By:

Ata, Ahmet Çağrı;
Yildiko, Ümit;
Tanriverdi, Aslihan Aycan;
Ebiri, Rüstem;
Yiğit, Evin;
Orak, İkram;
Cakmak, İsmail

Publication type:

Article

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 11, p. 6448, doi. 10.1007/s11664-021-09178-y

By:

Yeşildağ, Ali;
Erdoğan, Musa;
Sevgili, Ömer;
Çaldıran, Zakir;
Orak, İkram

Publication type:

Article

The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 1, p. 402, doi. 10.1007/s11664-019-07738-x

By:

Orak, İkram;
Caldiran, Zakir;
Bakir, Mete;
Cifci, Osman S.;
Kocyigit, Adem

Publication type:

Article

Frequency-Dependent Electrical Characterization of GO-SiO2 Composites in a Schottky Device.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6691, doi. 10.1007/s11664-018-6571-4

By:

Orak, Ikram;
Kocyigit, Adem;
Karteri, İbrahim;
Uruş, Serhan

Publication type:

Article

On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 10, p. 5728, doi. 10.1007/s11664-017-5613-7

By:

Nikravan, Afsoun;
Badali, Yosef;
Altındal, Şemsettin;
Uslu, İbrahim;
Orak, İkram

Publication type:

Article

Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHz.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4276, doi. 10.1007/s11664-017-5363-6

By:

Baraz, Nalan;
Yücedağ, İbrahim;
Azizian-Kalandaragh, Yashar;
Ersöz, Gülçin;
Orak, İkram;
Altındal, Şemsettin;
Akbari, Bashir;
Akbari, Hossein

Publication type:

Article

Synthesis and characterization of new cellulose derivatives and evaluation of cellulose and these new cellulose derivatives in diode construction.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 14, p. 1, doi. 10.1007/s10854-023-10527-2

By:

Uzun, İlhan;
Yiğit, Evin;
Karakaplan, Mehmet;
Orak, İkram

Publication type:

Article

Synthesis of canthaxanthin from β-carotene and evaluation of both substances in diode construction.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 4, p. 1888, doi. 10.1007/s10854-021-07389-x

By:

Uzun, İlhan;
Orak, İkram;
Sevgili, Ömer;
Yiğit, Evin;
Karakaplan, Mehmet

Publication type:

Article

The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17500, doi. 10.1007/s10854-021-06283-w

By:

Berk, Niyazi;
Seymen, Halil;
Orak, Ikram;
Karataş, Şükrü

Publication type:

Article

Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 22, p. 20090, doi. 10.1007/s10854-020-04530-0

By:

Uzun, İlhan;
Orak, İkram;
Karakaplan, Mehmet;
Yağmur, Hatice Karaer;
Yalçın, Şerife Pınar;
Akkılıç, Kemal

Publication type:

Article

Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 3, p. 1, doi. 10.1007/s00339-023-06432-4

By:

Yiğit, Evin;
Sevgili, Ömer;
Orak, İkram

Publication type:

Article

Frequency and voltage dependence of electrical conductivity, complex electric modulus, and dielectric properties of Al/Alq3/p-Si structure.

Published in:

Turkish Journal of Physics, 2020, v. 44, n. 1, p. 85, doi. 10.3906/fiz-1907-21

By:

ORAK, İkram;
KARABULUT, Abdulkerim

Publication type:

Article

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER.

Published in:

Surface Review & Letters, 2019, v. 26, n. 8, p. N.PAG, doi. 10.1142/S0218625X19500458

By:

KARABULUT, ABDULKERIM;
ORAK, IKRAM;
CAGLAR, MUJDAT;
TURUT, ABDULMECIT

Publication type:

Article

Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 1, p. -1, doi. 10.1142/S0217979217502769

By:

Badrinezhad, Lida;
Bilkan, Çigdem;
Azizian-Kalandaragh, Yashar;
Nematollahzadeh, Ali;
Orak, İkram;
Altindal, Şemsettin

Publication type:

Article

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N4/p-Si device.

Published in:

Pamukkale University Journal of Engineering Sciences, 2017, v. 23, n. 5, p. 536, doi. 10.5505/pajes.2016.23911

By:

ORAK, İkram;
KOÇYİĞİT, Adem

Publication type:

Article

Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri.

Published in:

Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 10, n. 1, p. 91, doi. 10.21597/jist.612518

By:

ÖZDEMİR, Muhammed Can;
SEVGILI, Ömer;
ORAK, İkram;
TURUT, Abdulmecit

Publication type:

Article

Refractory‐Metal‐Based Chalcogenides for Energy.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 47, p. 1, doi. 10.1002/adfm.202207705

By:

Özel, Faruk;
Arkan, Emre;
Coskun, Halime;
Deveci, İlyas;
Yıldırım, Murat;
Yıldırım, Mehmet;
Orak, İkram;
Erdal, Mehmet Okan;
Sarılmaz, Adem;
Ersöz, Tugrul Talha;
Koçyiğit, Adem;
Karabulut, Abdulkerim;
Özen, Abdurrahman;
Aljabour, Abdalaziz;
Kus, Mahmut;
Ersöz, Mustafa

Publication type:

Article

Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications.

Published in:

Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2019, v. 9, n. 3, p. 1367, doi. 10.21597/jist.534846

By:

BAYINDIR, Sinan;
ŞAHİNKAYA, Mehmet Akif;
ORAK, İkram

Publication type:

Article

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.

Published in:

Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2016, v. 6, n. 3, p. 57, doi. 10.21597/jist.2016321840

By:

ORAK, İkram;
KOÇYİĞİT, Adem

Publication type:

Article

Works matching AU Orak, Ikram

Synthesis, Structure Characterization, and Quantum Theory Simulations of Polyimide‐Au/PI/p‐Si Polymer‐Based Custom Photodiode.

The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature.

Two‐step novel aromatic polyimide synthesis and characterization: Survey of energy calculations and diode applications.

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si.

The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range.

Frequency-Dependent Electrical Characterization of GO-SiO<sub>2</sub> Composites in a Schottky Device.

On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage.

Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHz.

Synthesis and characterization of new cellulose derivatives and evaluation of cellulose and these new cellulose derivatives in diode construction.

Synthesis of canthaxanthin from β-carotene and evaluation of both substances in diode construction.

The electrical characteristics of metal–semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface.

Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives.

Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications.

Frequency and voltage dependence of electrical conductivity, complex electric modulus, and dielectric properties of Al/Alq3/p-Si structure.

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO<sub>2</sub> INTERFACIAL LAYER.

Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes.

The thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si<sub>3</sub>N<sub>4</sub>/p-Si device.

Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri.

Refractory‐Metal‐Based Chalcogenides for Energy.

Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications.

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal.