Found: 4
Select item for more details and to access through your institution.
BiFeO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> gate stack for metal-ferroelectric-insulator-silicon memory FET for IoT applications.
- Published in:
- Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 1, p. 1, doi. 10.1007/s00339-020-04203-z
- By:
- Publication type:
- Article
Investigation of BiFeO<sub>3</sub>/HfO<sub>2</sub> gate stack for ferroelectric field effect transistors in IOT applications.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 17, p. 22517, doi. 10.1007/s10854-021-06737-1
- By:
- Publication type:
- Article
Development of highly reliable BiFeO3/HfO2/Silicon gate stacks for ferroelectric non-volatile memories in IoT applications.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22107, doi. 10.1007/s10854-020-04713-9
- By:
- Publication type:
- Article
Self-cleansing properties of Ganga during mass ritualistic bathing on Maha-Kumbh.
- Published in:
- Environmental Monitoring & Assessment, 2020, v. 192, n. 4, p. 1, doi. 10.1007/s10661-020-8152-2
- By:
- Publication type:
- Article