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High thermal conductivity in wafer-scale cubic silicon carbide crystals.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-34943-w
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- Article
'Rework Program' in Japan: Innovative high-level rehabilitation.
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- Asia-Pacific Psychiatry, 2010, v. 2, n. 4, p. 208, doi. 10.1111/j.1758-5872.2010.00093.x
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- Article
Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.
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- Nature Communications, 2015, v. 6, n. 2, p. 6305, doi. 10.1038/ncomms7305
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- Article
Mouldable all-carbon integrated circuits.
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- Nature Communications, 2013, v. 4, n. 8, p. 2302, doi. 10.1038/ncomms3302
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- Article
Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling the Microscopic Root Cause of Dislocation Generation.
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- Advanced Materials, 2024, v. 36, n. 8, p. 1, doi. 10.1002/adma.202308599
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- Article
Twinning in Czochralski-Grown 36°-RY LiTaO 3 Single Crystals.
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- Crystals (2073-4352), 2020, v. 10, n. 11, p. 1009, doi. 10.3390/cryst10111009
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- Article
Fabrication of Carbon Nanotube Thin Films for Flexible Transistors by Using a Cross‐Linked Amine Polymer.
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- Chemistry - A European Journal, 2020, v. 26, n. 28, p. 6118, doi. 10.1002/chem.202000228
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- Article
Low‐Voltage Operable and Strain‐Insensitive Stretchable All‐Carbon Nanotube Integrated Circuits with Local Strain Suppression Layer.
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- Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000674
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- Article
Effect of carbon nanotube network morphology on thin film transistor performance.
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- Nano Research, 2012, v. 5, n. 5, p. 307, doi. 10.1007/s12274-012-0211-8
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- Article
Length-sorted semiconducting carbon nanotubes for high-mobility thin film transistors.
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- Nano Research, 2011, v. 4, n. 10, p. 963, doi. 10.1007/s12274-011-0152-7
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- Article
Flexible high-performance carbon nanotube integrated circuits.
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- Nature Nanotechnology, 2011, v. 6, n. 3, p. 156, doi. 10.1038/nnano.2011.1
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- Article
Fast and Ultraclean Approach for Measuring the Transport Properties of Carbon Nanotubes.
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- Advanced Functional Materials, 2020, v. 30, n. 5, p. N.PAG, doi. 10.1002/adfm.201907150
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- Article
Genki: An Integrated Course in Elementary Japanese I.
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- Japanese Language & Literature, 2021, v. 55, n. 1, p. 373, doi. 10.5195/jll.2021.169
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- Article
CNT Thin-Film Transistors: High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes (Adv. Mater. 24/2010).
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- Advanced Materials, 2010, v. 22, n. 24, p. n/a, doi. 10.1002/adma.201090083
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- Article
High-Performance Thin-Film Transistors with DNA-Assisted Solution Processing of Isolated Single-Walled Carbon Nanotubes.
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- Advanced Materials, 2010, v. 22, n. 24, p. 2698, doi. 10.1002/adma.200904006
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- Article
MoS<sub>2</sub> Nanogenerators: Harvesting Energy from Droplet Movement.
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- AAPPS Bulletin, 2020, v. 30, n. 4, p. 10, doi. 10.22661/AAPPSBL.2020.30.4.10
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- Article
In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM.
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- Journal of Electron Microscopy, 2010, v. 59, n. S1, p. S141, doi. 10.1093/jmicro/dfq042
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- Article
Growth of silicon nanowires on H-terminated Si {111} surface templates studied by transmission electron microscopy.
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- Journal of Electron Microscopy, 2005, v. 54, p. i25
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- Article
Analysis of polarization by means of polarized cathodoluminescence spectroscopy in a TEM.
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- Journal of Electron Microscopy, 2002, v. 51, n. 5, p. 281, doi. 10.1093/jmicro/51.5.281
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- Article
Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor.
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- Journal of Electron Microscopy, 1996, v. 45, n. 5, p. 380, doi. 10.1093/oxfordjournals.jmicro.a023455
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- Article
Study of Electron-Irradiation-Induced Defects in GaP by In-situ Optical Spectroscopy in a Transmission Electron Microscope.
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- Journal of Electron Microscopy, 1996, v. 45, n. 1, p. 73, doi. 10.1093/oxfordjournals.jmicro.a023415
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- Article
POTENTIAL PROFILE MEASUREMENT OF CARBON NANOTUBE FETs BASED ON THE ELECTROSTATIC FORCE DETECTION.
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- NANO, 2008, v. 3, n. 1, p. 51, doi. 10.1142/S1793292008000812
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- Article
Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design.
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- Advanced Materials, 2021, v. 33, n. 43, p. 1, doi. 10.1002/adma.202104564
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- Article
Artificial-intelligence-assisted mass fabrication of nanocantilevers from randomly positioned single carbon nanotubes.
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- Microsystems & Nanoengineering, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41378-023-00507-1
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- Article
Mechanical Properties of Cubic‐BN(111) Bulk Single Crystal Evaluated by Nanoindentation.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700473
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- Article
Excitonic transition energies in single-walled carbon nanotubes: Dependence on environmental dielectric constant.
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- Physica Status Solidi (B), 2007, v. 244, n. 11, p. 4002, doi. 10.1002/pssb.200776124
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- Article
High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C‐SiC/Diamond Junctions for Practical Device Processes.
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- Small, 2024, v. 20, n. 13, p. 1, doi. 10.1002/smll.202305574
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- Article