Found: 7
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Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar.
- Published in:
- Journal of the Society for Information Display, 2013, v. 21, n. 12, p. 517, doi. 10.1002/jsid.210
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- Publication type:
- Article
Mass transfer of water vapor in a hollow fiber for degassing processes.
- Published in:
- AIChE Journal, 1999, v. 45, n. 4, p. 681, doi. 10.1002/aic.690450403
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- Publication type:
- Article
3.2: Invited Paper: Application of Rotation Magnet Sputtering Technology to a-IGZO Film Depositions.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 5, doi. 10.1002/j.2168-0159.2014.tb00002.x
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- Article
52.4: Distinguished Paper: Electrical Properties of Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering with Using Kr and Xe Instead of Ar.
- Published in:
- 2013
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- Publication type:
- Other
Deposition of a-InGaZnO<sub>x</sub> by Rotation Magnet Sputtering.
- Published in:
- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 760, doi. 10.1002/j.2168-0159.2012.tb05895.x
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- Publication type:
- Article
Low Temperature Crystallization of a-InGaZnO<sub>4</sub> Films.
- Published in:
- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 1251, doi. 10.1002/j.2168-0159.2012.tb06025.x
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- Publication type:
- Article
GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS.
- Published in:
- Fluctuation & Noise Letters, 2005, v. 5, n. 4, p. L539, doi. 10.1142/S0219477505002999
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- Publication type:
- Article