Works matching AU Niu, Zhichuan

Results: 41

Cavity quantum electrodynamics with moiré photonic crystal nanocavity.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-59942-5

By:

Yan, Sai;
Li, Hancong;
Yang, Jingnan;
Chen, Xiqing;
Liu, Hanqing;
Dai, Deyan;
Zhu, Rui;
Ma, Zhikai;
Shi, Shushu;
Yang, Longlong;
Yuan, Yu;
Dai, Wenshuo;
Dai, Danjie;
Fu, Bowen;
Zuo, Zhanchun;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Gong, Qihuang

Publication type:

Article

Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing.

Published in:

Photonics, 2025, v. 12, n. 1, p. 62, doi. 10.3390/photonics12010062

By:

Dai, Deyan;
Liu, Hanqing;
Shang, Xiangjun;
Tan, Shizhuo;
Zhang, Qiaozhi;
Yang, Chengao;
Jiang, Dongwei;
Su, Xiangbin;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Coupling Performance Enhancement of GaSb-Based Single-Transverse-Mode Lasers with Reduced Beam Divergence Obtained via near Field Modulation.

Published in:

Photonics, 2022, v. 9, n. 12, p. 942, doi. 10.3390/photonics9120942

By:

Wang, Tianfang;
Yang, Chengao;
Chen, Yihang;
Yu, Hongguang;
Shi, Jianmei;
Su, Xiangbin;
Zhang, Yu;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Promotion of Specific Single-Transverse-Mode Beam Characteristics for GaSb-Based Narrow Ridge Waveguide Lasers via Customized Parameter Design.

Published in:

Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03758-5

By:

Wang, Tianfang;
Yang, Chengao;
Chen, Yihang;
Shi, Jianmei;
Yu, Hongguang;
Su, Xiangbin;
Zhang, Yu;
Xu, Yingqiang;
Niu, Zhichuan

Publication type:

Article

Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect.

Published in:

Microwave & Optical Technology Letters, 2002, v. 34, n. 5, p. 333, doi. 10.1002/mop.10454

By:

Ruikang, Zhang;
Yuan, Zhong;
Wei, Zhang;
Yingqiang, Xu;
Yun, Du;
Yongqing, Huang;
Xiaomin, Ren;
Zhichuan, Niu;
Ronghan, Wu

Publication type:

Article

Dual strategy of modulating growth temperature and inserting ultrathin barrier to enhance the wave function overlap in type-II superlattices.

Published in:

Nano Research, 2022, v. 15, n. 6, p. 5626, doi. 10.1007/s12274-022-4151-7

By:

Wu, Yuyang;
Zhang, Yahui;
Zhang, Yi;
Zhao, Yunhao;
Zhang, Yu;
Xu, Yingqiang;
Liang, Chongyun;
Niu, Zhichuan;
Shi, Yi;
Che, Renchao

Publication type:

Article

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures.

Published in:

Small, 2019, v. 15, n. 27, p. N.PAG, doi. 10.1002/smll.201900837

By:

Cai, Chenyuan;
Zhao, Yunhao;
Xie, Shengwen;
Zhao, Xuebing;
Zhang, Yu;
Xu, Yingqiang;
Liang, Chongyun;
Niu, Zhichuan;
Shi, Yi;
Li, Yuesheng;
Che, Renchao

Publication type:

Article

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.

Published in:

Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03358-1

By:

Li, Shulun;
Chen, Yao;
Shang, Xiangjun;
Yu, Ying;
Yang, Jiawei;
Huang, Junhui;
Su, Xiangbin;
Shen, Jiaxin;
Sun, Baoquan;
Ni, Haiqiao;
Su, Xingliang;
Wang, Kaiyou;
Niu, Zhichuan

Publication type:

Article

Watt-level continuous-wave antimonide laser diodes with high carrier-confined active region above 2.5 µm.

Published in:

Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-03989-8

By:

Yu, Hongguang;
Yang, Chengao;
Chen, Yihang;
Wang, Tianfang;
Shi, Jianmei;
Cao, Juntian;
Geng, Zhengqi;
Wang, Zhiyuan;
Zhang, Yu;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design.

Published in:

Applied Sciences (2076-3417), 2025, v. 15, n. 1, p. 41, doi. 10.3390/app15010041

By:

Cao, Juntian;
Yang, Chengao;
Chen, Yihang;
Yu, Hongguang;
Shi, Jianmei;
Wen, Haoran;
Geng, Zhengqi;
Wang, Zhiyuan;
Tan, Hao;
Zhang, Yu;
Wu, Donghai;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser.

Published in:

Applied Sciences (2076-3417), 2023, v. 13, n. 12, p. 6873, doi. 10.3390/app13126873

By:

Feng, Jian;
Meng, Bo;
Shang, Jinming;
Zhang, Xin;
Tong, Cunzhu;
Zhang, Yu;
Niu, Zhichuan;
Wang, Lijun

Publication type:

Article

High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer.

Published in:

Applied Sciences (2076-3417), 2023, v. 13, n. 9, p. 5506, doi. 10.3390/app13095506

By:

Chen, Yihang;
Yang, Chengao;
Wang, Tianfang;
Yu, Hongguang;
Shi, Jianmei;
Su, Xiangbin;
Zhang, Yu;
Zhao, Youwen;
Tong, Cunzhu;
Wu, Donghai;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

Published in:

Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-218

By:

Jie Li;
Hao Guo;
Jun Liu;
Jun Tang;
Haiqiao Ni;
Yunbo Shi;
Chenyang Xue;
Zhichuan Niu;
Wendong Zhang;
Mifeng Li;
Ying Yu

Publication type:

Article

Research Progress of GaSb Single Crystal.

Published in:

Journal of Synthetic Crystals, 2024, v. 53, n. 1, p. 1

By:

LIU Jingming;
YANG Jun;
ZHAO Youwen;
YANG Cheng'ao;
JIANG Dongwei;
NIU Zhichuan

Publication type:

Article

Correction to: Low-threshold topological nanolasers based on the second-order corner state.

Published in:

2021

By:

Zhang, Weixuan;
Xie, Xin;
Hao, Huiming;
Dang, Jianchen;
Xiao, Shan;
Shi, Shushu;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Zhang, Xiangdong;
Xu, Xiulai

Publication type:

Correction Notice

Low-threshold topological nanolasers based on the second-order corner state.

Published in:

Light: Science & Applications, 2020, v. 9, n. 1, p. 1, doi. 10.1038/s41377-020-00352-1

By:

Zhang, Weixuan;
Xie, Xin;
Hao, Huiming;
Dang, Jianchen;
Xiao, Shan;
Shi, Shushu;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Zhang, Xiangdong;
Xu, Xiulai

Publication type:

Article

Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 2, p. 139, doi. 10.3390/nano15020139

By:

Yu, Hongguang;
Yang, Chengao;
Chen, Yihang;
Shi, Jianmei;
Cao, Juntian;
Geng, Zhengqi;
Wang, Zhiyuan;
Wen, Haoran;
Zhang, Enquan;
Zhang, Yu;
Tan, Hao;
Wu, Donghai;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Annealing-Modulated Surface Reconstruction for Self-Assembly of High-Density Uniform InAs/GaAs Quantum Dots on Large Wafers Substrate.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 13, p. 1959, doi. 10.3390/nano13131959

By:

Shang, Xiangjun;
Su, Xiangbin;
Liu, Hanqing;
Hao, Huiming;
Li, Shulun;
Dai, Deyan;
Li, Mifeng;
Yu, Ying;
Zhang, Yu;
Wang, Guowei;
Xu, Yingqiang;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 1219, doi. 10.3390/nano12071219

By:

Shang, Xiangjun;
Li, Shulun;
Liu, Hanqing;
Su, Xiangbin;
Hao, Huiming;
Dai, Deyan;
Li, Xiaoming;
Li, Yuanyuan;
Gao, Yuanfei;
Dou, Xiuming;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1136, doi. 10.3390/nano11051136

By:

Li, Shulun;
Shang, Xiangjun;
Chen, Yao;
Su, Xiangbin;
Hao, Huiming;
Liu, Hanqing;
Zhang, Yu;
Ni, Haiqiao;
Niu, Zhichuan;
Mora-Seró, Iván

Publication type:

Article

High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 10, p. 1417, doi. 10.3390/cryst13101417

By:

Dai, Deyan;
Liu, Hanqing;
Su, Xiangbin;
Shang, Xiangjun;
Li, Shulun;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Light Hole Excitons in Strain-Coupled Bilayer Quantum Dots with Small Fine-Structure Splitting.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 8, p. 1116, doi. 10.3390/cryst12081116

By:

Shang, Xiangjun;
Liu, Hanqing;
Su, Xiangbin;
Li, Shulun;
Hao, Huiming;
Dai, Deyan;
Chen, Zesheng;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Symmetric Excitons in an (001)-Based InAs/GaAs Quantum Dot Near Si Dopant for Photon-Pair Entanglement.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 10, p. 1194, doi. 10.3390/cryst11101194

By:

Shang, Xiangjun;
Li, Shulun;
Liu, Hanqing;
Ma, Ben;
Su, Xiangbin;
Chen, Yao;
Shen, Jiaxin;
Hao, Huiming;
Liu, Bing;
Dou, Xiuming;
Ji, Yang;
Sun, Baoquan;
Ni, Haiqiao;
Niu, Zhichuan

Publication type:

Article

Resonant tunnelling diode photodetector operating at near-infrared wavelengths with high responsivity.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1355, doi. 10.1049/el.2015.1041

By:

Yu Dong;
Jianxing Xu;
Guanglong Wang;
Haiqiao Ni;
Kangming Pei;
Jianhui Chen;
Fengqi Gao;
Baochen Li;
Zhichuan Niu

Publication type:

Article

Resonant tunnelling diode photodetector operating at near‐infrared wavelengths with high responsivity.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1355, doi. 10.1049/el.2015.1041

By:

Dong, Yu;
Xu, Jianxing;
Wang, Guanglong;
Ni, Haiqiao;
Pei, Kangming;
Chen, Jianhui;
Gao, Fengqi;
Li, Baochen;
Niu, Zhichuan

Publication type:

Article

Topological Nanophotonics: Cavity Quantum Electrodynamics with Second‐Order Topological Corner State (Laser Photonics Rev. 14(8)/2020).

Published in:

Laser & Photonics Reviews, 2020, v. 14, n. 8, p. 1, doi. 10.1002/lpor.202070047

By:

Xie, Xin;
Zhang, Weixuan;
He, Xiaowu;
Wu, Shiyao;
Dang, Jianchen;
Peng, Kai;
Song, Feilong;
Yang, Longlong;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Zhang, Xiangdong;
Xu, Xiulai

Publication type:

Article

Cavity Quantum Electrodynamics with Second‐Order Topological Corner State.

Published in:

Laser & Photonics Reviews, 2020, v. 14, n. 8, p. 1, doi. 10.1002/lpor.201900425

By:

Xie, Xin;
Zhang, Weixuan;
He, Xiaowu;
Wu, Shiyao;
Dang, Jianchen;
Peng, Kai;
Song, Feilong;
Yang, Longlong;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Zhang, Xiangdong;
Xu, Xiulai

Publication type:

Article

Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates.

Published in:

Nature, 1998, v. 392, n. 6671, p. 56, doi. 10.1038/32127

By:

Nötzel, Richard;
Niu, Zhichuan;
Ramsteiner, Manfred;
Schönherr, Hans-Peter;
Tranpert, Achim;
Däweritz, Lutz;
Ploog, Klaus H.

Publication type:

Article

Preface to the special topic on quantum dots.

Published in:

2017

By:

Zhichuan Niu

Publication type:

Editorial

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application.

Published in:

Materials (1996-1944), 2012, v. 5, n. 12, p. 2917, doi. 10.3390/ma5122917

By:

Yunbo Shi;
Hao Guo;
Haiqiao Ni;
Chenyang Xue;
Zhichuan Niu;
Jun Tang;
Jun Liu;
Wendong Zhang;
Jifang He;
Mifeng Li;
Ying Yu

Publication type:

Article

Research progress on high performance mid-infrared antimonide semiconductor lasers.

Published in:

Laser Technology, 2024, v. 48, n. 6, p. 790, doi. 10.7510/jgjs.issn.1001-3806.2024.06.003

By:

CAO Juntian;
YANG Cheng'ao;
CHEN Yihang;
YU Hongguang;
SHI Jianmei;
WANG Tianfang;
WEN Haoran;
WANG Zhiyuan;
GENG Zhengqi;
ZHANG Yu;
ZHAO Youwen;
WU Donghai;
XU Yingqiang;
NI Haiqiao;
NIU Zhichuan

Publication type:

Article

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap.

Published in:

Nano Research, 2020, v. 13, n. 6, p. 1536, doi. 10.1007/s12274-020-2764-2

By:

Cai, Chenyuan;
Zhao, Yunhao;
Chang, Faran;
Zhao, Xuebing;
Yang, Liting;
Liang, Chongyun;
Wang, Guowei;
Niu, Zhichuan;
Shi, Yi;
Liu, Xianhu;
Li, Yuesheng;
Che, Renchao

Publication type:

Article

Full polarization control of photons with evanescent wave coupling in the ultra subwavelength gap of photonic molecules.

Published in:

Light: Science & Applications, 2025, v. 14, n. 1, p. 1, doi. 10.1038/s41377-025-01794-1

By:

Zhu, Rui;
Qian, Chenjiang;
Xiao, Shan;
Yang, Jingnan;
Yan, Sai;
Liu, Hanqing;
Dai, Deyan;
Li, Hancong;
Yang, Longlong;
Chen, Xiqing;
Yuan, Yu;
Dai, Danjie;
Zuo, Zhanchun;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Gong, Qihuang;
Xu, Xiulai

Publication type:

Article

Full polarization control of photons with evanescent wave coupling in the ultra subwavelength gap of photonic molecules.

Published in:

Light: Science & Applications, 2025, v. 14, n. 1, p. 1, doi. 10.1038/s41377-025-01794-1

By:

Zhu, Rui;
Qian, Chenjiang;
Xiao, Shan;
Yang, Jingnan;
Yan, Sai;
Liu, Hanqing;
Dai, Deyan;
Li, Hancong;
Yang, Longlong;
Chen, Xiqing;
Yuan, Yu;
Dai, Danjie;
Zuo, Zhanchun;
Ni, Haiqiao;
Niu, Zhichuan;
Wang, Can;
Jin, Kuijuan;
Gong, Qihuang;
Xu, Xiulai

Publication type:

Article

CORRUGATED SURFACES FORMED ON GaAs (331)A SUBSTRATES:: THE TEMPLATE FOR LATERALLY ORDERED InGaAs NANOWIRES.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 757, doi. 10.1142/S0219581X0600511X

By:

ZHENHUA MIAO;
ZHENG GONG;
ZHIDAN FANG;
ZHICHUAN NIU

Publication type:

Article

TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 847, doi. 10.1142/S0219581X0600525X

By:

ZHIDAN FANG;
ZHENG GONG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

SURFACE MORPHOLOGY EVOLUTION OF STRAINED InAs/GaAs(331)A FILMS.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 883, doi. 10.1142/S0219581X06005315

By:

ZHENG GONG;
ZHIDAN FANG;
ZHENHUA MIAO;
ZHICHUAN NIU

Publication type:

Article

Study on the asymmetry of nanopore in Al droplet etching.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 8, p. 1, doi. 10.1007/s11082-021-03011-w

By:

Shen, Jiaxin;
Lv, Hongliang;
Ni, Haiqiao;
Liu, Hanqing;
Su, Xiangbin;
Zhang, Jing;
Shang, Xiangjun;
Zhuo, Zhiyao;
Li, Shulun;
Chen, Yao;
Sun, Baoquan;
Zhang, Yu;
Niu, Zhichuan

Publication type:

Article

MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates.

Published in:

Optical & Quantum Electronics, 2020, v. 52, n. 3, p. 1, doi. 10.1007/s11082-020-2247-4

By:

Li, Yong;
Li, Xiaoming;
Hao, Ruiting;
Guo, Jie;
Wang, Yunpeng;
Aierken, Abuduwayiti;
Zhuang, Yu;
Chang, Faran;
Gu, Kang;
Wei, Guoshuai;
Ma, Xiaole;
Wang, Guowei;
Xu, Yingqiang;
Niu, Zhichuan

Publication type:

Article

Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices.

Published in:

Optical & Quantum Electronics, 2019, v. 51, n. 3, p. N.PAG, doi. 10.1007/s11082-019-1779-y

By:

Guo, Chunyan;
Jiang, Zhi;
Jiang, Dongwei;
Wang, Guowei;
Xu, Yingqiang;
Wang, Tao;
Tian, Jinshou;
Wu, Zhaoxin;
Niu, Zhichuan

Publication type:

Article

Bright semiconductor single-photon sources pumped by heterogeneously integrated micropillar lasers with electrical injections.

Published in:

Light: Science & Applications, 2023, v. 12, n. 1, p. 1, doi. 10.1038/s41377-023-01110-9

By:

Li, Xueshi;
Liu, Shunfa;
Wei, Yuming;
Ma, Jiantao;
Song, Changkun;
Yu, Ying;
Su, Rongbin;
Geng, Wei;
Ni, Haiqiao;
Liu, Hanqing;
Su, Xiangbin;
Niu, Zhichuan;
Chen, You-ling;
Liu, Jin

Publication type:

Article