Works by Nikam, Revannath Dnyandeo

Results: 9

Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100219

By:

Lee, Jongwon;
Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Kwak, Hyunjeong;
Kim, Seyoung;
Hwang, Hyunsang

Publication type:

Article

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100142

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Hwang, Hyunsang

Publication type:

Article

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901100

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Lee, Jongwon;
Rajput, Krishn Gopal;
Hwang, Hyunsang

Publication type:

Article

Surface Diffusion and Epitaxial Self‐Planarization for Wafer‐Scale Single‐Grain Metal Chalcogenide Thin Films.

Published in:

Advanced Materials, 2021, v. 33, n. 35, p. 1, doi. 10.1002/adma.202102252

By:

Giri, Anupam;
Kumar, Manish;
Kim, Jaeseon;
Pal, Monalisa;
Banerjee, Writam;
Nikam, Revannath Dnyandeo;
Kwak, Junghyeok;
Kong, Minsik;
Kim, Seong Hun;
Thiyagarajan, Kaliannan;
Kim, Geonwoo;
Hwang, Hyunsang;
Lee, Hyun Hwi;
Lee, Donghwa;
Jeong, Unyong

Publication type:

Article

Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity.

Published in:

Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-019-55310-8

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Lee, Jongwon;
Rajput, Krishn Gopal;
Banerjee, Writam;
Hwang, Hyunsang

Publication type:

Article

Atomic Threshold Switch Based on All‐2D Material Heterostructures with Excellent Control Over Filament Growth and Volatility.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 29, p. 1, doi. 10.1002/adfm.202201749

By:

Nikam, Revannath Dnyandeo;
Hwang, Hyunsang

Publication type:

Article

Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to‐Device Engineering.

Published in:

Small, 2023, v. 19, n. 40, p. 1, doi. 10.1002/smll.202302593

By:

Nikam, Revannath Dnyandeo;
Lee, Jongwon;
Lee, Kyumin;
Hwang, Hyunsang

Publication type:

Article

Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing.

Published in:

Small, 2021, v. 17, n. 44, p. 1, doi. 10.1002/smll.202103543

By:

Nikam, Revannath Dnyandeo;
Lee, Jongwon;
Choi, Wooseok;
Banerjee, Writam;
Kwak, Myonghoon;
Yadav, Manoj;
Hwang, Hyunsang

Publication type:

Article

Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride.

Published in:

Small, 2021, v. 17, n. 7, p. 1, doi. 10.1002/smll.202006760

By:

Nikam, Revannath Dnyandeo;
Rajput, Krishn Gopal;
Hwang, Hyunsang

Publication type:

Article