Found: 21
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Theoretical Investigation of Dual-Material Stacked Gate Oxide-Source Dielectric Pocket TFET Based on Interface Trap Charges and Temperature Variations.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 15, p. 1, doi. 10.1142/S0218126623502523
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- Article
Sensitivity Assessment of Electrically Doped Cavity on Source Junctionless Tunnel Field-Effect Transistor-Based Biosensor.
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- Journal of Circuits, Systems & Computers, 2023, v. 32, n. 1, p. 1, doi. 10.1142/S0218126623500184
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- Article
Impact of gate overlap and underlap on analog/RF and linearity performance of dual-material gate-oxide-stack double-gate TFET.
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- Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 11, p. 1, doi. 10.1007/s00339-022-06083-x
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- Article
Performance assessment of cavity on source dual material split gate GaAs/InAs/Ge junctionless TFET for label-free detection of biomolecules.
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- Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 10, p. 1, doi. 10.1007/s00339-022-06017-7
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- Article
Feasibility analysis of a solar‐assisted electric vehicle charging station model considering differential pricing.
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- Energy Storage (2578-4862), 2021, v. 3, n. 4, p. 1, doi. 10.1002/est2.237
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- Article
Temperature sensitivity analysis of SGO metal strip JL TFET.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 4, p. 444, doi. 10.1049/iet-cds.2019.0412
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- Article
Effect of ITCs on gate stacked JL-TFET based on work-function engineering.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 12, p. 1238, doi. 10.1049/mnl.2019.0252
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- Article
Metal-strip approach on junctionless TFET in the presence of positive charge.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 9, p. N.PAG, doi. 10.1007/s00339-019-2966-1
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- Article
Approach on electrically doped TFET for suppression of ambipolar and improving RF performance.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2019, v. 13, n. 6, p. 787, doi. 10.1049/iet-cds.2018.5394
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- Article
Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 10, p. 1033, doi. 10.1049/mnl.2018.5598
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- Article
Dual-material dual-oxide double-gate TFET for improvement in DC characteristics, analog/RF and linearity performance.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 5, p. N.PAG, doi. 10.1007/s00339-019-2650-5
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- Article
A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET.
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- Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 2, p. 1, doi. 10.1007/s00339-019-2378-2
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- Article
Impact of gate material engineering on ED-TFET for improving DC/analogue-RF/linearity performances.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 12, p. 1653, doi. 10.1049/mnl.2018.5131
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- Article
Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 8, p. 1192, doi. 10.1049/mnl.2017.0869
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- Article
Impact of interface trap charges on dopingless tunnel FET for enhancement of linearity characteristics.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 7, p. 1, doi. 10.1007/s00339-018-1923-8
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- Article
Junctionless based dielectric modulated electrically doped tunnel FET based biosensor for label-free detection.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 4, p. 452, doi. 10.1049/mnl.2017.0580
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- Article
Performance estimation of polarity controlled electrostatically doped tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 4, p. 239, doi. 10.1049/mnl.2016.0729
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- Article
Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 1, p. 11, doi. 10.1049/mnl.2016.0351
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- Article
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 8, p. 460, doi. 10.1049/mnl.2016.0178
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- Article
Physics-based simulation study of high-performance gallium arsenide phosphide-indium gallium arsenide tunnel field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 7, p. 366, doi. 10.1049/mnl.2016.0050
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- Article
High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 6, p. 319, doi. 10.1049/mnl.2015.0526
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- Article