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Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.
Published in:
Acta Crystallographica Section B: Structural Science, Crystal Engineering & Materials, 2013, v. 69, n. 1, p. 30, doi. 10.1107/S2052519213000183
By:
- Baidakova, M. V.;
- Bert, N. A.;
- Chaldyshev, V.V.;
- Nevedomsky, V. N.;
- Yagovkina, M. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
By:
- Babichev, A. V.;
- Pirogov, E. V.;
- Sobolev, M. S.;
- Denisov, D. V.;
- Fominykh, H. A.;
- Baranov, A. I.;
- Gudovskikh, A. S.;
- Melnichenko, I. A.;
- Yunin, P. A.;
- Nevedomsky, V. N.;
- Tokarev, M. V.;
- Ber, B. Ya.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Heterostructure of a 2.5 THz Range Quantum-Cascade Detector.
Published in:
Semiconductors, 2023, v. 57, n. 10, p. 440, doi. 10.1134/S1063782623050019
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Jollivet, A.;
- Quach, P.;
- Karachinsky, L. Ya.;
- Nevedomsky, V. N.;
- Novikov, I. I.;
- Tchernycheva, M.;
- Julien, F. H.;
- Egorov, A. Yu.
Publication type:
Article
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 745, doi. 10.1134/S1063782618060039
By:
- Babichev, A. V.;
- Kurochkin, A. S.;
- Kolodeznyi, E. C.;
- Filimonov, A. V.;
- Usikova, A. A.;
- Nevedomsky, V. N.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs.
Published in:
Semiconductors, 2009, v. 43, n. 10, p. 1387, doi. 10.1134/S1063782609100236
By:
- Bert, N. A.;
- Kolesnikova, A. L.;
- Nevedomsky, V. N.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Romanov, A. E.;
- Seleznev, V. M.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
Publication type:
Article
Peculiarities of Growth of InAs Quantum Dot Arrays with Low Surface Density by Molecular Beam Epitaxy.
Published in:
Technical Physics Letters, 2023, v. 49, p. S168, doi. 10.1134/S1063785023900650
By:
- Blokhin, S. A.;
- Vasyl'ev, A. P.;
- Nadtochy, A. M.;
- Prasolov, N. D.;
- Nevedomsky, V. N.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Kuzmenkov, A. G.;
- Maleev, N. A.;
- Ustinov, V. M.
Publication type:
Article
Lasers Based on Quantum Well-Dots Emitting in the 980- and 1080-nm Optical Ranges.
Published in:
Technical Physics Letters, 2019, v. 45, n. 2, p. 163, doi. 10.1134/S1063785019020305
By:
- Nadtochiy, A. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Shernyakov, Yu. M.;
- Kornyshov, G. O.;
- Serin, A. A.;
- Payusov, A. S.;
- Nevedomsky, V. N.;
- Gordeev, N. Yu.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer.
Published in:
Technical Physics Letters, 2018, v. 44, n. 11, p. 965, doi. 10.1134/S1063785018110068
By:
- Gadzhiyev, I. M.;
- Buyalo, M. S.;
- Payusov, A. S.;
- Gubenko, A. E.;
- Mikhrin, S. S.;
- Nevedomsky, V. N.;
- Portnoi, E. L.
Publication type:
Article
Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current.
Published in:
Technical Physics Letters, 2018, v. 44, n. 10, p. 862, doi. 10.1134/S1063785018100103
By:
- Maleev, N. A.;
- Bobrov, M. A.;
- Kuzmenkov, A. G.;
- Vasil'ev, A. P.;
- Kulagina, M. M.;
- Maleev, S. N.;
- Blokhin, S. A.;
- Nevedomsky, V. N.;
- Ustinov, V. M.
Publication type:
Article

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