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Preparation of Nanosized α-Fe2O3 Using Mechanical Activation.
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- Russian Journal of General Chemistry, 2019, v. 89, n. 12, p. 2453, doi. 10.1134/S107036321912020X
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- Article
Solid-phase synthesis of nanocrystalline lanthanum zirconate using mechanical activation.
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- Russian Journal of General Chemistry, 2017, v. 87, n. 10, p. 2258, doi. 10.1134/S1070363217100024
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- Article
Solid-state synthesis of nanocrystalline strontium zirconate assisted by mechanical activation.
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- Russian Journal of General Chemistry, 2016, v. 86, n. 4, p. 785, doi. 10.1134/S1070363216040046
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Heterostructures for quantum-cascade lasers of the wavelength range of 7-8 μm.
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- Technical Physics Letters, 2017, v. 43, n. 7, p. 666, doi. 10.1134/S1063785017070173
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- Article
Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping.
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- Technical Physics Letters, 2016, v. 42, n. 10, p. 1009, doi. 10.1134/S1063785016100023
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- Article
InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition.
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- Technical Physics Letters, 2016, v. 42, n. 1, p. 96, doi. 10.1134/S1063785016010284
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Fabrication of carbon nanowires by pyrolysis of aqueous solution of sugar within asbestos nanofibers.
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- Technical Physics Letters, 2015, v. 41, n. 5, p. 452, doi. 10.1134/S1063785015050028
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Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group.
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- Technical Physics, 2020, v. 65, n. 12, p. 2047, doi. 10.1134/S1063784220120099
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Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers.
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- Technical Physics, 2019, v. 64, n. 10, p. 1509, doi. 10.1134/S106378421910013X
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Weakly Ordered Nanostructured Silver Disilicate and Its Colloidal Solutions: Preparation and Properties.
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- Technical Physics, 2019, v. 64, n. 6, p. 884, doi. 10.1134/S1063784219060033
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- Article
Lasing in 9.6-μm Quantum Cascade Lasers.
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- Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043
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Formation of silver nanoparticles in photothermorefractive glasses during electron irradiation.
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- Technical Physics, 2011, v. 56, n. 5, p. 662, doi. 10.1134/S1063784211050148
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Nanostructure of CaMgSi<sub>2</sub>O<sub>6</sub> (Diopside) and CaTiO<sub>3</sub> (Perovskite) mechanically activated in carbon dioxide.
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- Inorganic Materials, 2008, v. 44, n. 6, p. 635, doi. 10.1134/S0020168508060162
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- Article
(In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties.
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- Semiconductors, 2013, v. 47, n. 8, p. 1037, doi. 10.1134/S1063782613080058
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Electron microscopy of GaAs Structures with InAs and as quantum dots.
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- Semiconductors, 2011, v. 45, n. 12, p. 1580, doi. 10.1134/S1063782611120104
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Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field.
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- Semiconductors, 2011, v. 45, n. 8, p. 1064, doi. 10.1134/S1063782611080203
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Wannier-Stark states in a superlattice of InAs/GaAs quantum dots.
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- Semiconductors, 2010, v. 44, n. 6, p. 761, doi. 10.1134/S1063782610060126
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GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process.
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- Semiconductors, 2009, v. 43, n. 12, p. 1617, doi. 10.1134/S1063782609120082
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Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.
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- Semiconductors, 2002, v. 36, n. 2, p. 230
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Solid-state synthesis of nanocrystalline BaZrO using mechanical activation.
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- Inorganic Materials, 2017, v. 53, n. 5, p. 496, doi. 10.1134/S0020168517050119
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The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1128, doi. 10.1134/S1063785020110267
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- Article
Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures.
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- Semiconductors, 2020, v. 54, n. 10, p. 1315, doi. 10.1134/S1063782620100292
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Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.
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- Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255
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Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.
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- Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207
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Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser.
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- Semiconductors, 2019, v. 53, n. 3, p. 345, doi. 10.1134/S1063782619030023
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Bimodality in Arrays of InGaAs Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates.
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- Semiconductors, 2018, v. 52, n. 1, p. 53, doi. 10.1134/S1063782618010153
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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.
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- Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185
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The influence of synthesis conditions and ultraviolet irradiation on the morphology and concentration of silver nanocrystals in photo-thermo-refractive glasses.
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- Glass Technology: European Journal of Glass Science & Technology Part A, 2014, v. 55, n. 6, p. 191
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- Article