Works by Neimash, V. B.

Results: 8

Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion).

Published in:

Semiconductors, 1999, v. 33, n. 12, p. 1279, doi. 10.1134/1.1187907

By:

Neımash, V. B.;
Puzenko, E. A.;
Kabaldin, A. N.;
Kraıchinskiı, A. N.;
Kras’ko, N. N.

Publication type:

Article

Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment.

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 939, doi. 10.1134/1.1187518

By:

Neimash, V. B.;
Siratskii, V. M.;
Kraichinskii, A. N.;
Puzenko, E. A.

Publication type:

Article

Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 (March 1998)].

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 916, doi. 10.1134/1.1187348

By:

Kabalbin, A. N.;
Neımash, V. B.;
Tsmots’, V. M.;
Shtym, V. S.

Publication type:

Article

Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity.

Published in:

Semiconductors, 1998, v. 32, n. 3, p. 263, doi. 10.1134/1.1187376

By:

Kabaldin, A. N.;
Neımash, V. B.;
Tsmots’, V. M.;
Shtym, V. S.

Publication type:

Article

Enhancement of radiation-induced EPR signal in bioapatites.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 173, doi. 10.15407/spqeo25.02.173

By:

Nosenko, V. V.;
Vorona, I. P.;
Lemishko, S. V.;
Golovina, I. S.;
Yukhymchuk, V. O.;
Okulov, S. M.;
Neimash, V. B.;
Povarchuk, V. Yu.;
Solopan, S. O.;
Belous, A. G.

Publication type:

Article

Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 206, doi. 10.15407/spqeo22.02.206

By:

Neimash, V. B.;
Nikolenko, A. S.;
Strelchuk, V. V.;
Shepeliavyi, P. Ye.;
Litvinchuk, P. M.;
Melnyk, V. V.;
Olhovik, I. V.

Publication type:

Article

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 396, doi. 10.15407/spqeo20.04.396

By:

Neimash, V. B.;
Melnyk, V. V.;
Fedorenko, L. L.;
Shepeliavyi, P. Ye.;
Strelchuk, V. V.;
Nikolayenko, A. S.;
Isaiev, M. V.;
Kuzmich, A. G.

Publication type:

Article

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 331

By:

Neimash, V. B.;
Poroshin, V. M.;
Ye. Shepeliavyi, P.;
Yukhymchuk, V. O.;
Melnyk, V. V.;
Makara, V. A.;
Kuzmich, A. G.

Publication type:

Article