Works by Nazarova, T. M.
Results: 5
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
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- Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
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- Article
Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 101, doi. 10.15407/spqeo11.02.101
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- Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
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- Article
Influence of Lithium on Specific Heat and Changes in the Thermodynamic Functions of Aluminum Alloy AB1.
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- High Temperature, 2020, v. 58, n. 1, p. 58, doi. 10.1134/S0018151X20020066
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- Article