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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth.
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- Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213
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Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation.
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- Semiconductors, 2019, v. 53, n. 16, p. 2106, doi. 10.1134/S1063782619120194
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- Article
Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation.
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- Semiconductors, 2018, v. 52, n. 16, p. 2135, doi. 10.1134/S1063782618160340
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- Article
Сoncentric GaAs Nanorings Growth Modelling.
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- Semiconductors, 2018, v. 52, n. 5, p. 639, doi. 10.1134/S1063782618050226
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- Article
Monte Carlo simulation of growth of nanowhiskers.
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- Semiconductors, 2010, v. 44, n. 1, p. 127, doi. 10.1134/S1063782610010227
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- Article
Peculiarities of axial and radial Ge--Si heterojunction formation in nanowires: Monte Carlo simulation.
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- Pure & Applied Chemistry, 2012, v. 84, n. 12, p. 2619, doi. 10.1351/PAC-CON-11-12-05
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- Article
Possibilities of Monte Carlo simulation for examination of nanowhisker growth.
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- Pure & Applied Chemistry, 2010, v. 82, n. 11, p. 2017, doi. 10.1351/PAC-CON-09-12-03
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- Article
A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates.
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- Technical Physics Letters, 2020, v. 46, n. 2, p. 161, doi. 10.1134/S1063785020020194
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- Article
Monte Carlo Simulation of Alternate Pulsed Epitaxial Growth of GaAs Nanowires.
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- Physica Status Solidi (B), 2022, v. 259, n. 11, p. 1, doi. 10.1002/pssb.202100641
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- Article