Found: 7
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Evolution of femtosecond laser-induced damage in doped GaN thin films.
- Published in:
- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 2, p. 381, doi. 10.1007/s00339-013-8103-7
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- Article
Time-resolved free carrier lifetime microscopy in bulk GaN.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 9, p. 647, doi. 10.1002/pssr.201307217
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- Article
Stipraus kolegiravimo Mg<sup>2+</sup> jonais poveikis šviesos emisijai ceriu legiruotuose daugiakomponenčiuose granatiniuose sintiliatoriuose.
- Published in:
- Vilnius University Proceedings, 2023, v. 38, p. 254
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- Article
Optical properties of Ce-doped multicomponent garnet-type scintillators containing different rare earth ions.
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- Vilnius University Proceedings, 2023, v. 38, p. 249
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- Article
Nepusiausvirųjų krūvininkų dinamika išsigimusiame N-poliškumo GaN.
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- Vilnius University Proceedings, 2023, v. 38, p. 54
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- Article
Excitation Transfer Engineering in Ce‐Doped Oxide Crystalline Scintillators by Codoping with Alkali‐Earth Ions.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201700798
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- Article
Layer thickness dependent carrier recombination rate in HVPE GaN.
- Published in:
- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1703, doi. 10.1002/pssb.200983532
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- Article