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Low cost high voltage GaN polarization superjunction field effect transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600834
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Increased static R<sub>ON</sub> in GaN-on-silicon power transistors under high-side operation with floating substrate conditions.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 1, p. 108, doi. 10.1049/el.2014.3723
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- Publication type:
- Article
Evaluation of gate drive circuit effect in cascode GaN-based applications.
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- Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021, v. 69, n. 2, p. 1, doi. 10.24425/bpasts.2021.136742
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- Article