Found: 9
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Sputtering Yields of Si Bombarded with 10–540-keV C 60 Ions.
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- Quantum Beam Science (QuBS), 2022, v. 6, n. 1, p. 12, doi. 10.3390/qubs6010012
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- Article
Polymerization of solid C<sub>60</sub> under C<sup>+</sup><sub>60</sub> cluster ion bombardment.
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- Applied Physics A: Materials Science & Processing, 2009, v. 95, n. 3, p. 867, doi. 10.1007/s00339-009-5088-3
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- Article
Structural phenomena in glassy carbon induced by cobalt ion implantation.
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- Applied Physics A: Materials Science & Processing, 2008, v. 92, n. 3, p. 673, doi. 10.1007/s00339-008-4615-y
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- Article
Prospects of Spin Catalysis on Spin-Polarized Graphene Heterostructures.
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- Australian Journal of Chemistry, 2016, v. 69, n. 7, p. 753, doi. 10.1071/CH15174
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- Article
Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy.
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- Advanced Functional Materials, 2018, v. 28, n. 20, p. 1, doi. 10.1002/adfm.201800462
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- Article
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam.
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- Physica Status Solidi (B), 2015, v. 252, n. 12, p. 2794, doi. 10.1002/pssb.201552345
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- Article
Spintronic Devices: Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices (Adv. Mater. 6/2020).
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- Advanced Materials, 2020, v. 32, n. 6, p. N.PAG, doi. 10.1002/adma.202070043
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- Article
Graphene/Half‐Metallic Heusler Alloy: A Novel Heterostructure toward High‐Performance Graphene Spintronic Devices.
- Published in:
- Advanced Materials, 2020, v. 32, n. 6, p. N.PAG, doi. 10.1002/adma.201905734
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- Article
Contracted interlayer distance in graphene/sapphire heterostructure.
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- Nano Research, 2015, v. 8, n. 5, p. 1535, doi. 10.1007/s12274-014-0640-7
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- Article