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Comprehensive self-consistent three-dimensional simulation of an operation of the GaAs-based oxide-confined 1.3-µm quantum-dot (InGa)As/GaAs vertical-cavity surface-emitting lasers.
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- Optical & Quantum Electronics, 2004, v. 36, n. 4, p. 331
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- Article
Transverse-mode selectivity in possible nitride vertical-cavity surface-emitting lasers.
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- Optical & Quantum Electronics, 2003, v. 35, n. 11, p. 1037, doi. 10.1023/A:1026068725681
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- Article
Threshold simulation of 1.3-µm oxide-confined in-plane quantum-dot (InGa)As/GaAs lasers.
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- Optical & Quantum Electronics, 2003, v. 35, n. 7, p. 675, doi. 10.1023/A:1023977203373
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- Article
Cascade nitride VCSEL designs with tunnel junctions.
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- Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 3, p. 315, doi. 10.1007/s00339-003-2195-4
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- Article
Nitride VCSEL design for continuous-wave operation of higher-order optical modes.
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- Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 6, p. 761, doi. 10.1007/s00339-003-2131-7
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- Article
Thermal resistance of GaAs/AlAs superlattices used in modern light-emitting diodes.
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- Opto-Electronics Review, 2014, v. 22, n. 2, p. 86, doi. 10.2478/s11772-014-0181-3
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- Article
Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication.
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- Opto-Electronics Review, 2011, v. 19, n. 3, p. 320, doi. 10.2478/s11772-011-0026-2
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- Article
Current spreading modification to enhance single-fundamental-mode VCSEL operation at higher temperatures.
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- Opto-Electronics Review, 2011, v. 19, n. 2, p. 131, doi. 10.2478/s11772-011-0018-2
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- Article
VCSEL structures used to suppress higher-order transverse modes.
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- Opto-Electronics Review, 2011, v. 19, n. 1, p. 119, doi. 10.2478/s11772-010-0075-y
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- Article
Sensitivity of a VCSEL threshold performance to inaccuracies in its manufacturing.
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- Opto-Electronics Review, 2010, v. 18, n. 2, p. 181, doi. 10.2478/s11772-010-0012-0
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- Article
Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication.
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- Opto-Electronics Review, 2009, v. 17, n. 3, p. 217, doi. 10.2478/s11772-008-0067-3
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- Article
Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures.
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- Opto-Electronics Review, 2008, v. 16, n. 1, p. 34, doi. 10.2478/s11772-007-0027-3
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- Article
Principles of VCSEL designing.
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- Opto-Electronics Review, 2008, v. 16, n. 1, p. 18, doi. 10.2478/s11772-007-0028-2
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- Article
How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?
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- Opto-Electronics Review, 2007, v. 15, n. 2, p. 88, doi. 10.2478/s11772-007-0001-0
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- Article