Works matching AU Nakamura, Atsutomo


Results: 26
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    Segregation mechanism of arsenic dopants at grain boundaries in silicon.

    Published in:
    Science & Technology of Advanced Materials, 2021, v. 22, n. 1, p. 169, doi. 10.1080/27660400.2021.1969701
    By:
    • Ohno, Yutaka;
    • Yokoi, Tatsuya;
    • Shimizu, Yasuo;
    • Ren, Jie;
    • Inoue, Koji;
    • Nagai, Yasuyoshi;
    • Kutsukake, Kentaro;
    • Fujiwara, Kozo;
    • Nakamura, Atsutomo;
    • Matsunaga, Katsuyuki;
    • Yoshida, Hideto
    Publication type:
    Article
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    Structure of the Basal Edge Dislocation in ZnO.

    Published in:
    Crystals (2073-4352), 2018, v. 8, n. 3, p. 127, doi. 10.3390/cryst8030127
    By:
    • Nakamura, Atsutomo;
    • Tochigi, Eita;
    • Nagahara, Ryota;
    • Furushima, Yuho;
    • Oshima, Yu;
    • Ikuhara, Yuichi;
    • Yokoi, Tatsuya;
    • Matsunaga, Katsuyuki
    Publication type:
    Article
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